1 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Maximum Operating Temperature | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
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VIEW | STMicroelectronics | IGBT Transistors IGBT & Power Bipolar | Through Hole | + 175 C | 468 W | Single | 1200 V | 2.5 V | 80 A | 250 nA | +/- 20 V |
