- Manufacture :
- Package / Case :
- Series :
- Pd - Power Dissipation :
- Vgs - Gate-Source Breakdown Voltage :
- Drain-Source Current at Vgs=0 :
5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Series | Packaging | Pd - Power Dissipation | Configuration | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Breakdown Voltage | Drain-Source Current at Vgs=0 | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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14,880
In-stock
|
Toshiba | JFET Junction FET N-Ch 0.3 to 6.5mA 10mA | SMD/SMT | SC-70-3 | 2SK879 | Reel | 100 mW | Single | N-Channel | 10 V | 6.5 mA | - 30 V | 1.2 mA | |||||
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2,775
In-stock
|
Toshiba | JFET Junction FET N-Ch 0.3 to 6.5mA 10mA | SMD/SMT | SC-70-3 | 2SK879 | Reel | 100 mW | Single | N-Channel | 10 V | 6.5 mA | - 30 V | 2.6 mA | |||||
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3,410
In-stock
|
Toshiba | JFET Junction FET N-Ch 0.3 to 6.5mA 10mA | SMD/SMT | SC-59-3 | 2SK208 | Reel | 100 mW | Single | N-Channel | 10 V | 6.5 mA | - 30 V | 1.2 mA | |||||
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259
In-stock
|
Vishay Semiconductors | JFET 35V 5mA | SMD/SMT | TO-206AF | + 150 C | Bulk | 300 mW | Single | N-Channel | 10 V | 150 Ohms | - 35 V | 10 mA | |||||
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204
In-stock
|
Toshiba | JFET Junction FET N-Ch 0.3 to 6.5mA 10mA | SMD/SMT | SC-59-3 | 2SK208 | Reel | 100 mW | Single | N-Channel | 10 V | 6.5 mA | - 30 V | 0.3 mA |
