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Pd - Power Dissipation :
Vgs - Gate-Source Breakdown Voltage :
Drain-Source Current at Vgs=0 :
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5 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Mounting Style Package / Case Series Packaging Pd - Power Dissipation Configuration Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Vgs - Gate-Source Breakdown Voltage Drain-Source Current at Vgs=0
2SK2145-Y(TE85L,F)
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4,553
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Toshiba JFET Junction FET N-Ch x2 1.2 to 14mA 10mA SMD/SMT SMV-5 2SK2145 Reel 300 mW Dual N-Channel 10 V 14 mA - 30 V 1.2 mA
2SK3320-BL(TE85L,F
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3,419
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Toshiba JFET Junction FET N-Ch x2 1.2V to 14mA 10mA SMD/SMT USV-5 2SK3320 Reel 200 mW Dual N-Channel 10 V 14 mA - 30 V 6 mA
2SK2145-GR(TE85L,F
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913
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Toshiba JFET Junction FET N-Ch x2 1.2 to 14mA 10mA SMD/SMT SMV-5 2SK2145 Reel 300 mW Dual N-Channel 10 V 14 mA - 30 V 2.6 mA
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96
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Vishay Semiconductors JFET Dual Matched Through Hole TO-78       Dual N-Channel     - 25 V  
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Vishay Semiconductors JFET Dual Matched Through Hole TO-71       Dual N-Channel     - 25 V  
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