- Package / Case :
- Rds On - Drain-Source Resistance :
3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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8,608
In-stock
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Diodes Incorporated | MOSFET 30V P-Ch Enh FET 32mOhm -10V -6.8A | 20 V | SMD/SMT | U-DFN2020-E-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 5.3 A | 60 mOhms | - 1 V to - 2.4 V | 10.9 nC | Enhancement | |||
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3,685
In-stock
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Diodes Incorporated | MOSFET 30V P-Ch Enh FET 32mOhm -10V -6.8A | 20 V | SMD/SMT | U-DFN2020-E-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 5.3 A | 60 mOhms | - 1 V to - 2.4 V | 10.9 nC | Enhancement | |||
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VIEW | Diodes Incorporated | MOSFET PMOS SINGLE P-CHANNL 30V 5.3A | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 5.3 A | 65 mOhms | Enhancement |
