- Package / Case :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Number of Channels :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Applied Filters :
11 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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4,852
In-stock
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Diodes Incorporated | MOSFET 60V N-CH. Low Side MOSFET | - | SMD/SMT | SO-8 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 2 A | 250 mOhms | - | - | Enhancement | IntelliFET | |||
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6,549
In-stock
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Diodes Incorporated | MOSFET 30V N-Chnl UMOS | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 2 A | 180 mOhms | Enhancement | ||||||
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4,563
In-stock
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Diodes Incorporated | MOSFET 650mW 20V | 12 V | SMD/SMT | SOT-26-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 20 V | 2 A | 165 mOhms | 1 V | Enhancement | |||||
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4,773
In-stock
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Diodes Incorporated | MOSFET 30V N Chnl UMOS | 12 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 2 A | 150 mOhms | 0.7 V | 2.93 nC | Enhancement | ||||
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2,485
In-stock
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Diodes Incorporated | MOSFET 150V N-Ch Enh Fet 310mOhm 10Vgs 2.0A | 20 V | SMD/SMT | SOT-223-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 150 V | 2 A | 178 mOhms | 1 V | 8.7 nC | Enhancement | ||||
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5,537
In-stock
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Diodes Incorporated | MOSFET 600mW 20Vdss | 12 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 2 A | 110 mOhms | Enhancement | ||||||
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3,960
In-stock
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Diodes Incorporated | MOSFET 20V N-Ch Enh FET 20Vdss 2.0A 7A 600mW | 12 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 2 A | 230 mOhms | 500 mV | 2.3 nC | Enhancement | ||||
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425
In-stock
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Diodes Incorporated | MOSFET 60V N-Ch FET FET 2A 480mJ Enh | 5 V | SMD/SMT | SOT-223-3 | - 40 C | + 125 C | Reel | 1 Channel | Si | N-Channel | 65 V | 2 A | 250 mOhms | Enhancement | IntelliFET | |||||
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1,976
In-stock
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Diodes Incorporated | MOSFET 60V N-Ch Intellifet 200mohm 2A 490mJ | 5 V | SMD/SMT | SOT-223-3 | - 40 C | + 125 C | Reel | 1 Channel | Si | N-Channel | 60 V | 2 A | 150 mOhms | 700 mV | Enhancement | IntelliFET | ||||
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3,000
In-stock
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Diodes Incorporated | MOSFET 600mW 30Vdss | 12 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 2 A | 150 mOhms | Enhancement | ||||||
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12,500
In-stock
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Diodes Incorporated | MOSFET Low Side IntelliFET | 5 V | SMD/SMT | SO-8 | - 40 C | + 125 C | Reel | 1 Channel | N-Channel | 60 V | 2 A | 150 mOhms | 0.7 V | Enhancement | IntelliFET |
