- Package / Case :
- Number of Channels :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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1,768
In-stock
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Diodes Incorporated | MOSFET N-Ch Enh Mode FET 60Vdss 20Vgss | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 60 V | 3.3 A | 70 mOhms | 3 V | 12.3 nC | Enhancement | |||
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3,465
In-stock
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Diodes Incorporated | MOSFET MOSFET BVDSS: 25V-30 SOT23,3K | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 3.3 A | 73 mOhms | 8.6 nC | Enhancement | ||||
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21,870
In-stock
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Diodes Incorporated | MOSFET 30V N-Ch ENH Mode 120mOhm 10VGS 3.3A | 20 V | SMD/SMT | SOT-89-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 3.3 A | 120 mOhms | 1 V | 5 nC | Enhancement | |||
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2,500
In-stock
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Diodes Incorporated | MOSFET MOSFET,N-CHANNEL 60V, 3.6A/- 4.4A | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 60 V | 3.3 A | 48 mOhms | 5.4 nC | |||||
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909,000
In-stock
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Diodes Incorporated | MOSFET 900mW 20Vdss | 8 V | SMD/SMT | SOT-26-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 3.3 A | 55 mOhms | Enhancement |
