- Package / Case :
- Number of Channels :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Applied Filters :
12 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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5,334
In-stock
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Diodes Incorporated | MOSFET P-Ch -20V ENH Mode 35mOhm -4.5V -6.0A | 12 V | SMD/SMT | TSOT-26-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 6 A | 35 mOhms | - 1.5 V | 15.4 nC | Enhancement | ||||
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2,861
In-stock
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Diodes Incorporated | MOSFET MOSFET BVDSS: 31V-40 1V-40V SO-8 T&R 2.5K | 25 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 9.7 A | 35 mOhms | 2.1 V | 6 nC | Enhancement | ||||
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513
In-stock
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Diodes Incorporated | MOSFET N and P Channel | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 30 V | 6.4 A | 35 mOhms | Enhancement | ||||||
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1,206
In-stock
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Diodes Incorporated | MOSFET Cmp 30V NP Ch UMOS | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 30 V | 6.4 A, 5.4 A | 35 mOhms | Enhancement | ||||||
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888
In-stock
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Diodes Incorporated | MOSFET Dl 30V N-Chnl UMOS | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V | 6.2 A | 35 mOhms | Enhancement | ||||||
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883
In-stock
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Diodes Incorporated | MOSFET 30V N Chnl UMOS | 20 V | SMD/SMT | MSOP-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 6.7 A | 35 mOhms | 1 V | 26.8 nC | Enhancement | ||||
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2,985
In-stock
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Diodes Incorporated | MOSFET N-Ch Enh Mode FET 8Vdss 5Vgss 15A | 5 V | SMD/SMT | X1-WLB0808-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 8 V | 4 A | 35 mOhms | 350 mV | 15 nC | Enhancement | ||||
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603
In-stock
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Diodes Incorporated | MOSFET Dl 20V N-Chnl UMOS | 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 20 V | 7.7 A | 35 mOhms | Enhancement | ||||||
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900
In-stock
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Diodes Incorporated | MOSFET 20V N-Ch Enh Mode 8Vgss 7.9A .66W | 8 V | SMD/SMT | U-DFN2020-F-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 7.9 A | 35 mOhms | 1 V | 18 nC | Enhancement | ||||
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2,000
In-stock
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Diodes Incorporated | MOSFET 30V P-Chnl HDMOS | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 7.9 A | 35 mOhms | Enhancement | ||||||
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14,820
In-stock
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Diodes Incorporated | MOSFET 30V P-Ch Enh Mode 50mOhm -10Vgs -4.3A | 25 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 4.3 A | 35 mOhms | - 1 V | 11.8 nC | Enhancement | ||||
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VIEW | Diodes Incorporated | MOSFET 20V N-Ch Enh Mode 8Vgss 7.9A .66W | 8 V | SMD/SMT | U-DFN2020-F-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 7.9 A | 35 mOhms | 1 V | 18 nC | Enhancement | PowerDI |