- Vgs - Gate-Source Voltage :
- Mounting Style :
- Package / Case :
- Number of Channels :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Applied Filters :
13 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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9,768
In-stock
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Diodes Incorporated | MOSFET N-Chnl 60V | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 150 mA | 5 Ohms | Enhancement | |||||
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9,398
In-stock
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Diodes Incorporated | MOSFET N-Chnl 60V | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 150 uA | 5 Ohms | Enhancement | |||||
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4,307
In-stock
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Diodes Incorporated | MOSFET P-Chnl 60V | 20 V | SMD/SMT | SOT-223-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 450 mA | 5 Ohms | Enhancement | |||||
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4,005
In-stock
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Diodes Incorporated | MOSFET N-Chnl 60V | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 200 mA | 5 Ohms | Enhancement | |||||
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2,737
In-stock
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Diodes Incorporated | MOSFET N-Chnl 60V | 20 V | Through Hole | TO-92-3 | - 55 C | + 150 C | Bulk | 1 Channel | Si | N-Channel | 60 V | 270 mA | 5 Ohms | Enhancement | |||||
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3,486
In-stock
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Diodes Incorporated | MOSFET P-Chnl 60V | 20 V | Through Hole | TO-92-3 | - 55 C | + 150 C | Bulk | 1 Channel | Si | P-Channel | - 60 V | - 280 mA | 5 Ohms | Enhancement | |||||
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1,423
In-stock
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Diodes Incorporated | MOSFET 60V 225mW | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 70 V | 500 mA | 5 Ohms | Enhancement | |||||
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4,547
In-stock
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Diodes Incorporated | MOSFET MOSFET BVDSS: 8V-24V X2-DFN0806-3 T&R 10K | 8 V | SMD/SMT | X2-DFN0806-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 330 mA | 5 Ohms | - 1 V | 0.4 nC | Enhancement | |||
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1,792
In-stock
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Diodes Incorporated | MOSFET P-Chnl 60V | 20 V | Through Hole | TO-92-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 280 mA | 5 Ohms | Enhancement | |||||
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5,720
In-stock
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Diodes Incorporated | MOSFET N-CHANNEL NPN ENHANCEMENT MODE | 12 V | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 50 V | 160 mA | 5 Ohms | Enhancement | |||||
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1,873
In-stock
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Diodes Incorporated | MOSFET N-Chnl 60V | 20 V | Through Hole | TO-92-3 | - 55 C | + 150 C | Bulk | 1 Channel | Si | N-Channel | 60 V | 270 mA | 5 Ohms | Enhancement | |||||
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69
In-stock
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Diodes Incorporated | MOSFET 20V N P Ch 20VDSS 0.45W Low RDSon | 8 V, 12 V | SMD/SMT | SOT-563-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 20 V | 1.15 A | 5 Ohms | 0.9 V, - 1 V | 0.5 nC | Enhancement | |||
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93,000
In-stock
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Diodes Incorporated | MOSFET PNP/NMOS | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | Si | N-Channel | 50 V | 160 mA | 5 Ohms |
