- Mounting Style :
- Package / Case :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
6 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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2,452
In-stock
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Diodes Incorporated | MOSFET Transistor PNP 30Vceo | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 700 V | 3.9 A | 1 Ohms | 2.9 V | 13.9 nC | Enhancement | PowerDI | |||
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12,496
In-stock
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Diodes Incorporated | MOSFET MOSFET BVDSS | 30 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 210 mA | 1.5 Ohms | 1 V | 821 pC | Enhancement | ||||
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357
In-stock
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Diodes Incorporated | MOSFET N-Ch Enh Mode FET 650V 10V VGS 9.0A | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 9 A | 1.3 Ohms | 3 V | 39 nC | Enhancement | ||||
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185
In-stock
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Diodes Incorporated | MOSFET N-CH MOSFET 650V 4A | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 4 A | 2.1 Ohms | 3 V | 13.5 nC | Enhancement | ||||
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365
In-stock
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Diodes Incorporated | MOSFET N-CH MOSFET 650V 4A | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 4 A | 2.1 Ohms | 3 V | 13.5 nC | Enhancement | ||||
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2,500
In-stock
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Diodes Incorporated | MOSFET 600V N-Ch Enh Mode 2.3Ohm 10V 3.7A | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 3.7 A | 2 Ohms | 2.5 V | 14.3 nC | Enhancement |
