- Number of Channels :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Applied Filters :
12 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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11,069
In-stock
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Diodes Incorporated | MOSFET MOSFET N-CHANNEL | 6 V | SMD/SMT | SOT-563-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 20 V | 1.38 A | 300 mOhms | 736.6 pC | |||||
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5,765
In-stock
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Diodes Incorporated | MOSFET P-Ch -20V VDSS Enchanced Mosfet | 6 V | SMD/SMT | SOT-323-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 820 mA | 1.5 Ohms | Enhancement | |||||
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4,620
In-stock
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Diodes Incorporated | MOSFET MOSFET P-CHANNEL SOT-523 | 6 V | SMD/SMT | SOT-523-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 460 mA | 1 Ohms | 622.4 pC | |||||
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9,804
In-stock
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Diodes Incorporated | MOSFET 20V Vdss 6V VGSS Complementary Pair | 6 V | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 20 V, 20 V | 1066 mA, 845 mA | 750 mOhms, 1.05 Ohms | Enhancement | |||||
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4,520
In-stock
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Diodes Incorporated | MOSFET MOSFET N-CHANNEL P-CHANNEL SOT-563 | 6 V | SMD/SMT | SOT-563-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 20 V, 20 V | 870 mA, 640 mA | 700 mOhms, 1.3 Ohms | 736.6 pC, 622.4 pC | |||||
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2,943
In-stock
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Diodes Incorporated | MOSFET MOSFET P-CHANNEL | 6 V | SMD/SMT | SOT-563-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 20 V | - 1.03 A | 500 mOhms | 622.4 pC | |||||
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10,972
In-stock
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Diodes Incorporated | MOSFET N-CH MOSFET 12V | 6 V | SMD/SMT | X1-DFN1006-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 12 V | 1.41 A | 150 mOhms | 350 mV | 1.5 nC | Enhancement | |||
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3,547
In-stock
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Diodes Incorporated | MOSFET MOSFET BVDSS | 6 V | SMD/SMT | SOT-26-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 20 V, 20 V | 1.34 A, - 1.14 A | 700 mOhms, 1.3 Ohms | 1 V | 736.6 pC | Enhancement | |||
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5,075
In-stock
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Diodes Incorporated | MOSFET MOSFET BVDSS: 8V-24V 2-DFN1006-3 T&R 3K | 6 V | SMD/SMT | X2-DFN1006-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 810 mA | 700 mOhms | 1 V | 736.6 pC | Enhancement | |||
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1,432
In-stock
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Diodes Incorporated | MOSFET MOSFET BVDSS: | 6 V | SMD/SMT | SOT-523-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 630 mA | 300 mOhms | 500 mV | 736.6 pC | Enhancement | |||
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GET PRICE |
26,988
In-stock
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Diodes Incorporated | MOSFET MOSFET N-CHANNEL SOT-523 | 6 V | SMD/SMT | SOT-523-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 630 mA | 300 mOhms | 500 mV | 736.6 pC | Enhancement | ||
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41,955
In-stock
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Diodes Incorporated | MOSFET MOSFET N-CHANNEL SOT-323 | 6 V | SMD/SMT | SOT-323-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 1 A | 300 mOhms | 736.6 pC |
