- Minimum Operating Temperature :
- Number of Channels :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
-
- - 1.5 A (2)
- - 1.6 A (1)
- - 197 mA (1)
- - 2 A (1)
- - 2.3 A (1)
- - 3 A (2)
- - 3.4 A (1)
- - 3.7 A (1)
- - 4 A (2)
- - 4.6 A (1)
- - 5.8 A (1)
- - 550 mA (1)
- 1.34 A, - 1.14 A (1)
- 1.9 A (3)
- 2 A (1)
- 2.5 A (1)
- 230 mA (1)
- 3 A (1)
- 3.1 A (1)
- 3.2 A (2)
- 3.3 A (1)
- 3.5 A (1)
- 305 mA (2)
- 4 A (1)
- 4.2 A, 4.2 A (1)
- 4.6 A (2)
- 5.3 A (1)
- 5.4 A (1)
- 540 mA (1)
- 6.5 A (1)
- 6.9 A (1)
- Rds On - Drain-Source Resistance :
-
- 100 mOhms (2)
- 110 mOhms (1)
- 115 mOhms (1)
- 130 mOhms (1)
- 14 Ohms (1)
- 150 mOhms (3)
- 165 mOhms (1)
- 180 mOhms (1)
- 190 mOhms (1)
- 2 Ohms (1)
- 22 mOhms, 22 mOhms (1)
- 225 mOhms (1)
- 230 mOhms (3)
- 24 mOhms (1)
- 25 mOhms (1)
- 250 mOhms (2)
- 32 mOhms (1)
- 375 mOhms (1)
- 4 Ohms (1)
- 40 mOhms (2)
- 450 mOhms (1)
- 55 mOhms (1)
- 550 mOhms (1)
- 60 mOhms (1)
- 64 mOhms (1)
- 65 mOhms (2)
- 700 mOhms, 1.3 Ohms (1)
- 80 mOhms (2)
- 9.5 Ohms (1)
- 900 mOhms (1)
- Vgs th - Gate-Source Threshold Voltage :
39 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
145,738
In-stock
|
Diodes Incorporated | MOSFET Dual N-Channel | 8 V | SMD/SMT | SOT-26-6 | - 65 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 20 V | 540 mA | 550 mOhms | Enhancement | |||||
|
|
11,382
In-stock
|
Diodes Incorporated | MOSFET Dual N-Channel | 20 V | SMD/SMT | SOT-26-6 | - 65 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 50 V | 305 mA | 2 Ohms | Enhancement | |||||
|
|
5,591
In-stock
|
Diodes Incorporated | MOSFET 30V N Chnl UMOS | 20 V | SMD/SMT | SOT-26-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 4.6 A | 65 mOhms | Enhancement | |||||
|
|
9,201
In-stock
|
Diodes Incorporated | MOSFET 30V P-Chnl HDMOS | 12 V | SMD/SMT | SOT-26-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 1.5 A | 230 mOhms | Enhancement | |||||
|
|
25,956
In-stock
|
Diodes Incorporated | MOSFET 500mW -20Vdss | 8 V | SMD/SMT | SOT-26-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 20 V | - 550 mA | 900 mOhms | Enhancement | |||||
|
|
3,960
In-stock
|
Diodes Incorporated | MOSFET 100V P-Chanl UMOS | 20 V | SMD/SMT | SOT-26-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 100 V | - 1.6 A | 450 mOhms | Enhancement | |||||
|
|
2,854
In-stock
|
Diodes Incorporated | MOSFET 100V N-Chnl UMOS | 20 V | SMD/SMT | SOT-26-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 1.9 A | 230 mOhms | Enhancement | |||||
|
|
4,563
In-stock
|
Diodes Incorporated | MOSFET 650mW 20V | 12 V | SMD/SMT | SOT-26-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 20 V | 2 A | 165 mOhms | 1 V | Enhancement | ||||
|
|
6,624
In-stock
|
Diodes Incorporated | MOSFET P-channel 1.25W | 12 V | SMD/SMT | SOT-26-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 4.6 A | 40 mOhms | Enhancement | |||||
|
|
4,492
In-stock
|
Diodes Incorporated | MOSFET 100V N-Chnl UMOS | 20 V | SMD/SMT | SOT-26-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 1.9 A | 250 mOhms | Enhancement | |||||
|
|
7,391
In-stock
|
Diodes Incorporated | MOSFET DUAL N-CHANNEL | 8 V | SMD/SMT | SOT-26-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 20 V | 6.5 A | 24 mOhms | 0.9 V | 8.8 nC | Enhancement | |||
|
|
2,757
In-stock
|
Diodes Incorporated | MOSFET N Channel | 12 V | SMD/SMT | SOT-26-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 4.6 A | 100 mOhms | Enhancement | |||||
|
|
4,263
In-stock
|
Diodes Incorporated | MOSFET 30V N-Chnl UMOS | 20 V | SMD/SMT | SOT-26-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 3 A | 180 mOhms | Enhancement | |||||
|
|
3,023
In-stock
|
Diodes Incorporated | MOSFET 60V N-Ch Enh FET 20Vgs 80mOhm | 20 V | SMD/SMT | SOT-26-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 2.5 A | 150 mOhms | 1 V | 5.8 nC | Enhancement | |||
|
|
1,826
In-stock
|
Diodes Incorporated | MOSFET P-Chnl 250V | 40 V | SMD/SMT | SOT-26-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 250 V | - 197 mA | 14 Ohms | Enhancement | |||||
|
|
1,438
In-stock
|
Diodes Incorporated | MOSFET 30V P-Chnl UMOS | 20 V | SMD/SMT | SOT-26-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 4 A | 110 mOhms | Enhancement | |||||
|
|
1,619
In-stock
|
Diodes Incorporated | MOSFET 60V N-Chnl UMOS | 20 V | SMD/SMT | SOT-26-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 3.5 A | 150 mOhms | Enhancement | |||||
|
|
305
In-stock
|
Diodes Incorporated | MOSFET Dual P-Channel | 12 V | SMD/SMT | SOT-26-6 | - 65 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 20 V | - 2 A | 150 mOhms | Enhancement | |||||
|
|
2,380
In-stock
|
Diodes Incorporated | MOSFET P-Channel 1.25W | 20 V | SMD/SMT | SOT-26-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 5.8 A | 65 mOhms | - 2.1 V | 10.1 nC | Enhancement | |||
|
|
2,200
In-stock
|
Diodes Incorporated | MOSFET 20V P-Chnl HDMOS | 12 V | SMD/SMT | SOT-26-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 2.3 A | 375 mOhms | Enhancement | |||||
|
|
3,547
In-stock
|
Diodes Incorporated | MOSFET MOSFET BVDSS | 6 V | SMD/SMT | SOT-26-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 20 V, 20 V | 1.34 A, - 1.14 A | 700 mOhms, 1.3 Ohms | 1 V | 736.6 pC | Enhancement | |||
|
|
4,886
In-stock
|
Diodes Incorporated | MOSFET Dual N-Channel | 20 V | SMD/SMT | SOT-26-6 | - 65 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 60 V | 305 mA | 4 Ohms | 1.4 V | 304 nC | Enhancement | |||
|
|
3,813
In-stock
|
Diodes Incorporated | MOSFET MOSFET N-CHANNEL SOT-26 | 20 V | SMD/SMT | SOT-26-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 5.3 A | 32 mOhms | 9.2 nC | |||||
|
|
2,975
In-stock
|
Diodes Incorporated | MOSFET PMOS-SINGLE | 20 V | SMD/SMT | SOT-26-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 4 A | 115 mOhms | Enhancement | |||||
|
|
2,695
In-stock
|
Diodes Incorporated | MOSFET 20V N-Chnl UMOS | 12 V | SMD/SMT | SOT-26-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 3.1 A | 225 mOhms | Enhancement | |||||
|
|
3,621
In-stock
|
Diodes Incorporated | MOSFET MOSFET SOT-26 20V, 3.2/4.2A | 8 V, 8 V | SMD/SMT | SOT-26-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 20 V, 20 V | 4.2 A, 4.2 A | 22 mOhms, 22 mOhms | 500 mV, 500 mV | 8.3 nC, 8.3 nC | Enhancement | |||
|
|
2,560
In-stock
|
Diodes Incorporated | MOSFET 900mW 30Vdss | 8 V | SMD/SMT | SOT-26-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 3.2 A | 60 mOhms | Enhancement | |||||
|
|
2,900
In-stock
|
Diodes Incorporated | MOSFET NMOS-SINGLE | 20 V | SMD/SMT | SOT-26-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 6.9 A | 25 mOhms | 2.1 V | 13 nC | Enhancement | |||
|
|
2,945
In-stock
|
Diodes Incorporated | MOSFET P-Channel | 12 V | SMD/SMT | SOT-26-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 3.4 A | 80 mOhms | Enhancement | |||||
|
|
2,365
In-stock
|
Diodes Incorporated | MOSFET 30V 4A N-CHANNEL | 20 V | SMD/SMT | SOT-26-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 4 A | 64 mOhms | Enhancement |
