- Package / Case :
- Number of Channels :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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10,801
In-stock
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Diodes Incorporated | MOSFET Dual N-Channel | 10 V | SMD/SMT | SOT-563-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V | 400 mA | 1.2 Ohms | Enhancement | |||||
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3,532
In-stock
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Diodes Incorporated | MOSFET 350mW 30Vdss | 10 V | SMD/SMT | X1-DFN1006-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 300 mA | 1.2 Ohms | Enhancement | |||||
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5,656
In-stock
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Diodes Incorporated | MOSFET 350mw 30V DUAL | 10 V | SMD/SMT | SOT-353-5 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V | 400 mA | 1.2 Ohms | Enhancement | |||||
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5,661
In-stock
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Diodes Incorporated | MOSFET N-Ch Enh Mode FET 30V 20Vgss 350mW | 10 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 350 mA | 2.8 Ohms | 1.5 V | 0.9 nC | Enhancement | |||
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VIEW | Diodes Incorporated | MOSFET N-Ch Enh Mode FET 30V 20Vgss 350mW | 10 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 350 mA | 2.8 Ohms | 1.5 V | 0.9 nC | Enhancement |
