- Mounting Style :
- Package / Case :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
3,588
In-stock
|
Fairchild Semiconductor | MOSFET PT7 N-ch 80/20V Power Trench MOSFET | 20 V | SMD/SMT | Power-33-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 80 V | 48 A | 8.5 mOhms | 2 V | 31 nC | PowerTrench Power Clip | ||||
|
|
458
In-stock
|
Fairchild Semiconductor | MOSFET 500V NCH MOSFET | 20 V | Through Hole | TO-3PN-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 48 A | 105 mOhms | Enhancement | ||||||
|
|
485
In-stock
|
Fairchild Semiconductor | MOSFET N-CH/500V/50A | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 48 A | 89 mOhms | 5 V | 105 nC | |||||
|
|
688
In-stock
|
Fairchild Semiconductor | MOSFET N-Channel FET Enhancement Mode | 20 V | Through Hole | TO-220-3 | - 65 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 48 A | 25 mOhms | Enhancement |
