- Package / Case :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
8 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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1,479
In-stock
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Fairchild Semiconductor | MOSFET SuperFET2 800V 850 mOhm Zener embedded, IPAK PKG | 20 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 6 A | 850 mOhms | 2.5 V | 22 nC | Enhancement | SuperFET II | ||||
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537
In-stock
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Fairchild Semiconductor | MOSFET 600V N-Channel SuperFET II MOSFET | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 37 A | 275 mOhms | 3 V | 109 nC | Enhancement | SuperFET II | ||||
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480
In-stock
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Fairchild Semiconductor | MOSFET SuperFET2 600V Fast ver | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 75 A | 43 mOhms | 3.5 V | 163 nC | Enhancement | SuperFET II | ||||
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464
In-stock
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Fairchild Semiconductor | MOSFET 650V N-Channel SuperFET II MOSFET | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 54 A | 184 mOhms | 3 V | 126 nC | Enhancement | SuperFET II | ||||
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384
In-stock
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Fairchild Semiconductor | MOSFET 600V N-Channel SuperFET II MOSFET | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 52 A | 195 mOhms | 3 V | 160 nC | Enhancement | SuperFET II | ||||
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605
In-stock
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Fairchild Semiconductor | MOSFET 650V N-Channel SuperFET II MOSFET | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 76 A | 96 mOhms | 3 V | 234 nC | Enhancement | SuperFET II | ||||
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395
In-stock
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Fairchild Semiconductor | MOSFET SuperFET2 800V 290 mOhm | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 17 A | 290 mOhms | 2.5 V | 58 nC | Enhancement | SuperFET II | ||||
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142
In-stock
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Fairchild Semiconductor | MOSFET 650V N-Channel SuperFET II MOSFET | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 20.6 A | 401 mOhms | 3 V | 63 nC | Enhancement | SuperFET II |