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- Rds On - Drain-Source Resistance :
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- 59 mOhms (1)
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- 65 mOhms (1)
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- 8 mOhms (3)
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- 96 mOhms (1)
120 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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46,129
In-stock
|
Fairchild Semiconductor | MOSFET N-CHANNEL 60V 200mA | 20 V | Through Hole | TO-92-3 | - 55 C | + 150 C | Bulk | 1 Channel | Si | N-Channel | 60 V | 200 mA | 1.2 Ohms | Enhancement | ||||||
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|
7,116
In-stock
|
Fairchild Semiconductor | MOSFET 100V N-Ch QFET Logic Level | 20 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 100 V | 10 A | 180 mOhms | Enhancement | ||||||
|
|
5,391
In-stock
|
Fairchild Semiconductor | MOSFET 60V N-Channel QFET Logic Level | 20 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 60 V | 17.2 A | 63 mOhms | Enhancement | ||||||
|
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4,225
In-stock
|
Fairchild Semiconductor | MOSFET 60V N-Channel QFET Logic Level | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 32 A | 27 mOhms | Enhancement | QFET | |||||
|
|
1,479
In-stock
|
Fairchild Semiconductor | MOSFET SuperFET2 800V 850 mOhm Zener embedded, IPAK PKG | 20 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 6 A | 850 mOhms | 2.5 V | 22 nC | Enhancement | SuperFET II | |||
|
|
2,193
In-stock
|
Fairchild Semiconductor | MOSFET 75a 55V NCh UltraFET | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 75 A | 8 mOhms | Enhancement | UltraFET | |||||
|
|
1,623
In-stock
|
Fairchild Semiconductor | MOSFET 100V 80A 15 OHM NCH POWER TREN | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 80 A | 15 Ohms | Enhancement | PowerTrench | |||||
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|
879
In-stock
|
Fairchild Semiconductor | MOSFET TO-220 N-CH ENHANCE | 20 V | Through Hole | TO-220-3 | - 65 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 75 A | 13 mOhms | Enhancement | ||||||
|
|
1,953
In-stock
|
Fairchild Semiconductor | MOSFET 150V NCh UltraFET Power Trench | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 79 A | 16 mOhms | Enhancement | PowerTrench | |||||
|
|
894
In-stock
|
Fairchild Semiconductor | MOSFET 75V N-Channel PowerTrench | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 75 V | 164 A | 4.7 mOhms | Enhancement | PowerTrench | |||||
|
|
991
In-stock
|
Fairchild Semiconductor | MOSFET 40V N-Channel Power Trench | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 277 A | 2.2 mOhms | Enhancement | PowerTrench | |||||
|
|
1,704
In-stock
|
Fairchild Semiconductor | MOSFET Trans MOS N-Ch 55V 75A | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 75 A | 7 mOhms | Enhancement | UltraFET | |||||
|
|
1,176
In-stock
|
Fairchild Semiconductor | MOSFET 60V 80a .38 Ohms/VGS=1V | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 80 A | 3.8 mOhms | Enhancement | PowerTrench | |||||
|
|
1,533
In-stock
|
Fairchild Semiconductor | MOSFET 100V N-Channel PowerTrench | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 164 A | 4.7 mOhms | Enhancement | PowerTrench | |||||
|
|
711
In-stock
|
Fairchild Semiconductor | MOSFET N-Channel PowerTrench MOSFET | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 75 V | 80 A | 4.7 mOhms | Enhancement | PowerTrench | |||||
|
|
1,240
In-stock
|
Fairchild Semiconductor | MOSFET 650V 44A N-Channel SuperFET MOSFET | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 44 A | 67 mOhms | 2.5 V | 78 nC | Enhancement | SuperFET III | |||
|
|
458
In-stock
|
Fairchild Semiconductor | MOSFET 500V NCH MOSFET | 20 V | Through Hole | TO-3PN-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 48 A | 105 mOhms | Enhancement | ||||||
|
|
373
In-stock
|
Fairchild Semiconductor | MOSFET 600V, 52A, 72mOhm N-Channel Mosfet | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 52 A | 65 mOhms | 165 nC | Enhancement | SuperFET II FRFET | ||||
|
|
583
In-stock
|
Fairchild Semiconductor | MOSFET 75a 100VN-Ch MOSFET | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 75 A | 8 mOhms | Enhancement | UltraFET | |||||
|
|
1,540
In-stock
|
Fairchild Semiconductor | MOSFET N-Ch PowerTrench Logic Level | 20 V | Through Hole | TO-220-3 | - 65 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 30 V | 80 A | 3.5 mOhms | Enhancement | PowerTrench | |||||
|
|
537
In-stock
|
Fairchild Semiconductor | MOSFET 600V N-Channel SuperFET II MOSFET | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 37 A | 275 mOhms | 3 V | 109 nC | Enhancement | SuperFET II | |||
|
|
480
In-stock
|
Fairchild Semiconductor | MOSFET SuperFET2 600V Fast ver | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 75 A | 43 mOhms | 3.5 V | 163 nC | Enhancement | SuperFET II | |||
|
|
464
In-stock
|
Fairchild Semiconductor | MOSFET 650V N-Channel SuperFET II MOSFET | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 54 A | 184 mOhms | 3 V | 126 nC | Enhancement | SuperFET II | |||
|
|
384
In-stock
|
Fairchild Semiconductor | MOSFET 600V N-Channel SuperFET II MOSFET | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 52 A | 195 mOhms | 3 V | 160 nC | Enhancement | SuperFET II | |||
|
|
605
In-stock
|
Fairchild Semiconductor | MOSFET 650V N-Channel SuperFET II MOSFET | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 76 A | 96 mOhms | 3 V | 234 nC | Enhancement | SuperFET II | |||
|
|
14,712
In-stock
|
Fairchild Semiconductor | MOSFET N-Channel MOSFET | 20 V | Through Hole | TO-92-3 | - 55 C | + 150 C | Bulk | 1 Channel | Si | N-Channel | 60 V | 500 mA | 1.2 Ohms | Enhancement | ||||||
|
|
16,109
In-stock
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Fairchild Semiconductor | MOSFET N-Channel MOSFET | 20 V | Through Hole | TO-92-3 | - 55 C | + 150 C | Bulk | 1 Channel | Si | N-Channel | 60 V | 400 mA | 2 Ohms | Enhancement | ||||||
|
|
2,901
In-stock
|
Fairchild Semiconductor | MOSFET 60V N-Channel QFET Logic Level | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 13.6 A | 110 mOhms | Enhancement | QFET | |||||
|
|
1,119
In-stock
|
Fairchild Semiconductor | MOSFET 60V N-Channel MOSFET | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 60 V | 65 A | 16 mOhms | Enhancement | ||||||
|
|
2,189
In-stock
|
Fairchild Semiconductor | MOSFET 100V 20A 38.2mOhm | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 100 V | 20 A | 38.2 mOhms | Enhancement | PowerTrench |
