- Mounting Style :
- Package / Case :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
6 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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2,580
In-stock
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Fairchild Semiconductor | MOSFET 30V N-Channel PowerTrench SyncFET | 20 V | SMD/SMT | Power-56-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 49 A | 2.4 mOhms | 1.7 V | 20 nC | PowerTrench SyncFET | ||||
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9,000
In-stock
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Fairchild Semiconductor | MOSFET 80V N Channel Power Trench MosFET | 20 V | SMD/SMT | Power-56-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 80 V | 50 A | 11.3 mOhms | 2 V | 20 nC | Enhancement | ||||
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2,241
In-stock
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Fairchild Semiconductor | MOSFET MV780/20V1000AMOSFET N-channelPowerTrench | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 80 V | 50 A | 30 mOhms | 2 V | 20 nC | Enhancement | ||||
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1,346
In-stock
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Fairchild Semiconductor | MOSFET 600V N-Channel MOSFET | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 7.4 A | 600 mOhms | 3.5 V | 20 nC | SuperFET II | ||||
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1,040
In-stock
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Fairchild Semiconductor | MOSFET SuperFET2 620mohm / 600V, FRFET | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 7.3 A | 620 mOhms | 3 V to 5 V | 20 nC | SuperFET II FRFET | ||||
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1,148
In-stock
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Fairchild Semiconductor | MOSFET 600V N-Channel MOSFET | 20 V | Through Hole | TO-220FP-3 | - 50 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 7.4 A | 600 mOhms | 2.5 V to 3.5 V | 20 nC | SuperFET II |
