- Package / Case :
- Number of Channels :
- Rds On - Drain-Source Resistance :
5 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Channel Mode | |
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22,334
In-stock
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Fairchild Semiconductor | MOSFET 0.115A, 60V N-Channel SOT-23 MOSFET | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 115 mA | 7.5 Ohms | 1.81 V | Enhancement | ||||
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11,043
In-stock
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Fairchild Semiconductor | MOSFET N-Chan Enhancement Mode Field Effect | 20 V | SMD/SMT | SOT-323-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 115 mA | 7.5 Ohms | Enhancement | |||||
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9,873
In-stock
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Fairchild Semiconductor | MOSFET N-Chan Enhancement Mode Field Effect | 20 V | SMD/SMT | SOT-523F-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 115 mA | 7.5 Ohms | Enhancement | |||||
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89,734
In-stock
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Fairchild Semiconductor | MOSFET N-Chan Enhancement Mode Field Effect | 20 V | SMD/SMT | SOT-323-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 60 V | 115 mA | 7.5 Ohms | Enhancement | |||||
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17,142
In-stock
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Fairchild Semiconductor | MOSFET N-Ch Enhancement Mode Field Effect | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 115 mA | 1.2 Ohms | Enhancement |