- Mounting Style :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Id - Continuous Drain Current :
-
- 105 A (1)
- 110 A (1)
- 114 A (1)
- 12 A (1)
- 12.8 A (1)
- 120 A (2)
- 13.6 A (1)
- 130 A (1)
- 144 A (1)
- 15 A (2)
- 156 A (1)
- 164 A (2)
- 171 A (1)
- 176 A (1)
- 19 A (1)
- 195 A (1)
- 20.2 A (1)
- 20.6 A (1)
- 21 A (1)
- 211 A (1)
- 23 A (1)
- 235 A (1)
- 24 A (1)
- 242 A (1)
- 265 A (1)
- 277 A (1)
- 29 A (1)
- 3.8 A (1)
- 30 A (1)
- 32 A (2)
- 35 A (2)
- 37 A (1)
- 4 A (1)
- 40 A (1)
- 41 A (1)
- 43 A (1)
- 44 A (1)
- 48 A (1)
- 50 A (1)
- 52 A (1)
- 54 A (1)
- 56 A (1)
- 58 A (1)
- 60 A (2)
- 61 A (1)
- 65 A (1)
- 70 A (1)
- 74 A (1)
- 75 A (10)
- 79 A (1)
- 80 A (13)
- 88 A (1)
- 92 A (1)
- 96 A (1)
- Rds On - Drain-Source Resistance :
-
- 1.3 Ohms (1)
- 1.35 Ohms (1)
- 1.96 mOhms (1)
- 10 mOhms (3)
- 11 mOhms (1)
- 11.6 mOhms (1)
- 110 mOhms (1)
- 12 mOhms (2)
- 13 mOhms (2)
- 14 mOhms (4)
- 15 mOhms (1)
- 15 Ohms (1)
- 150 mOhms (1)
- 16 mOhms (2)
- 180 mOhms (1)
- 19 mOhms (1)
- 190 mOhms (1)
- 199 mOhms (1)
- 2.2 mOhms (1)
- 2.5 mOhms (2)
- 2.67 mOhms (1)
- 2.7 mOhms (1)
- 2.8 mOhms (1)
- 2.85 mOhms (1)
- 21 mOhms (1)
- 22 mOhms (1)
- 25 mOhms (3)
- 260 mOhms (1)
- 27 mOhms (1)
- 3.1 mOhms (1)
- 3.2 mOhms (1)
- 3.5 mOhms (3)
- 3.6 mOhms (2)
- 3.8 mOhms (2)
- 3.9 mOhms (1)
- 32 mOhms (1)
- 34 mOhms (1)
- 36 mOhms (1)
- 4 mOhms (1)
- 4.1 mOhms (2)
- 4.7 mOhms (3)
- 40 mOhms (1)
- 42 mOhms (2)
- 5 mOhms (1)
- 5.3 mOhms (1)
- 5.5 mOhms (1)
- 54 mOhms (1)
- 59 mOhms (1)
- 6 mOhms (2)
- 6.85 mOhms (1)
- 67 mOhms (1)
- 7 mOhms (2)
- 7.35 mOhms (1)
- 7.5 mOhms (2)
- 8 mOhms (1)
- 8.7 mOhms (1)
- 80 mOhms (1)
- 9 mOhms (2)
81 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
4,225
In-stock
|
Fairchild Semiconductor | MOSFET 60V N-Channel QFET Logic Level | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 32 A | 27 mOhms | Enhancement | QFET | |||||
|
|
1,623
In-stock
|
Fairchild Semiconductor | MOSFET 100V 80A 15 OHM NCH POWER TREN | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 80 A | 15 Ohms | Enhancement | PowerTrench | |||||
|
|
879
In-stock
|
Fairchild Semiconductor | MOSFET TO-220 N-CH ENHANCE | 20 V | Through Hole | TO-220-3 | - 65 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 75 A | 13 mOhms | Enhancement | ||||||
|
|
1,953
In-stock
|
Fairchild Semiconductor | MOSFET 150V NCh UltraFET Power Trench | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 79 A | 16 mOhms | Enhancement | PowerTrench | |||||
|
|
894
In-stock
|
Fairchild Semiconductor | MOSFET 75V N-Channel PowerTrench | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 75 V | 164 A | 4.7 mOhms | Enhancement | PowerTrench | |||||
|
|
993
In-stock
|
Fairchild Semiconductor | MOSFET 100V N-Chan PowerTrench MOSFET | 20 V | SMD/SMT | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 144 A | 5.5 mOhms | 156 nC | PowerTrench | |||||
|
|
991
In-stock
|
Fairchild Semiconductor | MOSFET 40V N-Channel Power Trench | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 277 A | 2.2 mOhms | Enhancement | PowerTrench | |||||
|
|
1,176
In-stock
|
Fairchild Semiconductor | MOSFET 60V 80a .38 Ohms/VGS=1V | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 80 A | 3.8 mOhms | Enhancement | PowerTrench | |||||
|
|
760
In-stock
|
Fairchild Semiconductor | MOSFET 100V N-CHANNEL POWERTRENCH MOSFET | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 100 V | 120 A | 3.8 mOhms | 4 V | 57 nC | |||||||
|
|
1,533
In-stock
|
Fairchild Semiconductor | MOSFET 100V N-Channel PowerTrench | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 164 A | 4.7 mOhms | Enhancement | PowerTrench | |||||
|
|
1,240
In-stock
|
Fairchild Semiconductor | MOSFET 650V 44A N-Channel SuperFET MOSFET | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 44 A | 67 mOhms | 2.5 V | 78 nC | Enhancement | SuperFET III | |||
|
|
1,540
In-stock
|
Fairchild Semiconductor | MOSFET N-Ch PowerTrench Logic Level | 20 V | Through Hole | TO-220-3 | - 65 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 30 V | 80 A | 3.5 mOhms | Enhancement | PowerTrench | |||||
|
|
2,901
In-stock
|
Fairchild Semiconductor | MOSFET 60V N-Channel QFET Logic Level | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 13.6 A | 110 mOhms | Enhancement | QFET | |||||
|
|
1,119
In-stock
|
Fairchild Semiconductor | MOSFET 60V N-Channel MOSFET | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 60 V | 65 A | 16 mOhms | Enhancement | ||||||
|
|
1,190
In-stock
|
Fairchild Semiconductor | MOSFET TO-220AB N-CH POWER | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 50 A | 22 mOhms | Enhancement | ||||||
|
|
1,432
In-stock
|
Fairchild Semiconductor | MOSFET 60V N-Channel QFET Logic Level | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 52 A | 21 mOhms | Enhancement | QFET | |||||
|
|
1,270
In-stock
|
Fairchild Semiconductor | MOSFET N-Ch Power MOSFET | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 70 A | 14 mOhms | Enhancement | ||||||
|
|
1,318
In-stock
|
Fairchild Semiconductor | MOSFET 60V N-Channel | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 80 A | 10 mOhms | Enhancement | UniFET | |||||
|
|
1,483
In-stock
|
Fairchild Semiconductor | MOSFET 75V N-Channel MOSFET | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 75 V | 75 A | 11 mOhms | Enhancement | ||||||
|
|
1,407
In-stock
|
Fairchild Semiconductor | MOSFET 75a 55V 0.012Ohm NCh UltraFET | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 75 A | 12 mOhms | Enhancement | UltraFET | |||||
|
|
852
In-stock
|
Fairchild Semiconductor | MOSFET 75V 58a 0.016 Ohms/VGS=10V | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 75 V | 58 A | 13 mOhms | Enhancement | PowerTrench | |||||
|
|
877
In-stock
|
Fairchild Semiconductor | MOSFET 56a 100V N-Ch UltraFET 0.025 Ohm | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 56 A | 25 mOhms | Enhancement | UltraFET | |||||
|
|
1,126
In-stock
|
Fairchild Semiconductor | MOSFET 60V N-Ch Logic Level MOSFET | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 80 A | 6 mOhms | Enhancement | PowerTrench | |||||
|
|
781
In-stock
|
Fairchild Semiconductor | MOSFET 150V N-Ch UltraFET Trench | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 37 A | 32 mOhms | Enhancement | PowerTrench | |||||
|
|
748
In-stock
|
Fairchild Semiconductor | MOSFET 30V N-Channel PowerTrench MOSFET | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 30 V | 80 A | 2.5 mOhms | Enhancement | PowerTrench | |||||
|
|
918
In-stock
|
Fairchild Semiconductor | MOSFET 75a 100V N-Ch UltraFET | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 75 A | 14 mOhms | Enhancement | UltraFET | |||||
|
|
535
In-stock
|
Fairchild Semiconductor | MOSFET 75a 80V N-Ch UltraFET 0.014 Ohm | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 80 V | 75 A | 14 mOhms | Enhancement | UltraFET | |||||
|
|
786
In-stock
|
Fairchild Semiconductor | MOSFET 100V 75A N-Chan PowerTrench | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 75 A | 9 mOhms | Enhancement | PowerTrench | |||||
|
|
559
In-stock
|
Fairchild Semiconductor | MOSFET Smart Power Module | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 80 V | 120 A | 5.3 mOhms | 4.5 V | 65.4 nC | Enhancement | ||||
|
|
614
In-stock
|
Fairchild Semiconductor | MOSFET 43a 150V 0.042 Ohm Logic Level N-Ch | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 43 A | 42 mOhms | Enhancement | UltraFET |
