- Maximum Operating Temperature :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
6 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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1,158
In-stock
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Fairchild Semiconductor | MOSFET 100V P-Channel QFET | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 100 V | - 13.2 A | 125 mOhms | Enhancement | QFET | |||||
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1,096
In-stock
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Fairchild Semiconductor | MOSFET 250V P-Channel QFET | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 250 V | - 6 A | 620 mOhms | Enhancement | QFET | |||||
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1,181
In-stock
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Fairchild Semiconductor | MOSFET 200V P-Channel QFET | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 200 V | - 3.4 A | 1.4 Ohms | Enhancement | QFET | |||||
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993
In-stock
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Fairchild Semiconductor | MOSFET 120V P-Channel QFET | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 120 V | - 15 A | 200 mOhms | Enhancement | QFET | |||||
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271
In-stock
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Fairchild Semiconductor | MOSFET 200V P-Channel QFET | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 200 V | - 5.2 A | 690 mOhms | Enhancement | QFET | |||||
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438
In-stock
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Fairchild Semiconductor | MOSFET P-CH/250V/6A/0.62OHM, Y-formed lead | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 250 V | - 6 A | 480 mOhms | - 5 V | 29 nC | Enhancement | QFET |
