- Mounting Style :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
- Tradename :
31 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
5,832
In-stock
|
Fairchild Semiconductor | MOSFET 800V N-Channel QFET | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 800 V | 1.8 A | 6.3 Ohms | Enhancement | |||||||
|
6,472
In-stock
|
Fairchild Semiconductor | MOSFET SuperFET2 800V 2250mOhm Zener | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | Si | N-Channel | 800 V | 2.6 A | 2.25 Ohms | 4.5 V | 14 nC | SuperFET II | ||||||
|
702
In-stock
|
Fairchild Semiconductor | MOSFET 800V 23A N-Channel SuperFET II MOSFET | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 23 A | 220 mOhms | 2.5 V | 78 nC | Enhancement | SuperFET II | ||||
|
3,894
In-stock
|
Fairchild Semiconductor | MOSFET 800V Single | 30 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 1 A | 20 Ohms | Enhancement | |||||||
|
3,960
In-stock
|
Fairchild Semiconductor | MOSFET Power MOSFET | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 800 V | 1 A | 20 Ohms | Enhancement | |||||||
|
3,424
In-stock
|
Fairchild Semiconductor | MOSFET 800V 0.2A 20Ohm N-Channel | 30 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 800 V | 200 mA | 20 Ohms | Enhancement | |||||||
|
1,309
In-stock
|
Fairchild Semiconductor | MOSFET 800V N-Channel QFET | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 1.5 A | 6.3 Ohms | Enhancement | QFET | ||||||
|
1,728
In-stock
|
Fairchild Semiconductor | MOSFET 800V N-Channel QFET | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 3.9 A | 3.6 Ohms | Enhancement | QFET | ||||||
|
1,957
In-stock
|
Fairchild Semiconductor | MOSFET 800V N-Ch Q-FET advance C-Series | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 5.5 A | 2.5 Ohms | Enhancement | QFET | ||||||
|
1,310
In-stock
|
Fairchild Semiconductor | MOSFET 800V N-Ch Q-FET advance C-Series | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 6.6 A | 1.9 Ohms | Enhancement | QFET | ||||||
|
1,549
In-stock
|
Fairchild Semiconductor | MOSFET 800V N-Channel QFET | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 800 V | 3.9 A | 3.6 Ohms | Enhancement | |||||||
|
874
In-stock
|
Fairchild Semiconductor | MOSFET 800V N-Ch Q-FET advance C-Series | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 8 A | 1.55 Ohms | Enhancement | QFET | ||||||
|
1,202
In-stock
|
Fairchild Semiconductor | MOSFET 800V N-Channel QFET | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 800 V | 5.8 A | 1.95 Ohms | Enhancement | |||||||
|
998
In-stock
|
Fairchild Semiconductor | MOSFET 800V N-Channel QFET | 30 V | Through Hole | TO-262-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 6.6 A | 1.5 Ohms | Enhancement | |||||||
|
787
In-stock
|
Fairchild Semiconductor | MOSFET N-CH/800V/6A/QFET | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 3.3 A | 1.95 Ohms | Enhancement | QFET | ||||||
|
1,000
In-stock
|
Fairchild Semiconductor | MOSFET 800V N-Ch Adv Q-FET C-Series | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 5.5 A | 2.5 Ohms | Enhancement | |||||||
|
733
In-stock
|
Fairchild Semiconductor | MOSFET SuperFET2 800V 4300mOhm Zener | 30 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Tube | Si | N-Channel | 800 V | 1.6 A | 4.3 Ohms | 4.5 V | 8.8 nC | SuperFET II | ||||||
|
675
In-stock
|
Fairchild Semiconductor | MOSFET 800V N-Ch Q-FET advance C-Series | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 3 A | 4.8 Ohms | Enhancement | QFET | ||||||
|
1,150
In-stock
|
Fairchild Semiconductor | MOSFET 800V N-Ch Q-FET advance C-Series | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 3 A | 4.8 Ohms | Enhancement | QFET | ||||||
|
903
In-stock
|
Fairchild Semiconductor | MOSFET 800V N-Ch Q-FET advance C-Series | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 5.5 A | 2.5 Ohms | Enhancement | QFET | ||||||
|
9,717
In-stock
|
Fairchild Semiconductor | MOSFET 800V N-Ch Q-FET advance C-Series | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 6.6 A | 1.9 Ohms | Enhancement | QFET | ||||||
|
203
In-stock
|
Fairchild Semiconductor | MOSFET 800V N-Ch Q-FET advance C-Series | 30 V | Through Hole | TO-3PN-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 7 A | 1.9 Ohms | Enhancement | QFET | ||||||
|
770
In-stock
|
Fairchild Semiconductor | MOSFET NCH 800V 2A MOSFET | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 1.5 A | 4.9 Ohms | 5 V | 12 nC | QFET | |||||
|
479
In-stock
|
Fairchild Semiconductor | MOSFET 800V N-Ch Q-FET advance C-Series | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 8 A | 1.55 Ohms | Enhancement | QFET | ||||||
|
278
In-stock
|
Fairchild Semiconductor | MOSFET 800V N-Ch QFET Advance | 30 V | Through Hole | TO-3PN-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 10 A | 1.1 Ohms | Enhancement | QFET | ||||||
|
228
In-stock
|
Fairchild Semiconductor | MOSFET TO-3P N-CH 600V | 30 V | Through Hole | TO-3PN-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 12.6 A | 750 mOhms | Enhancement | QFET | ||||||
|
136
In-stock
|
Fairchild Semiconductor | MOSFET 800V N-Channel QFET | 30 V | Through Hole | TO-3PF-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 8 A | 750 mOhms | Enhancement | QFET | ||||||
|
820
In-stock
|
Fairchild Semiconductor | MOSFET SuperFET2 800V 2250mOhm, Zener embeded, TO220F PKG | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | Si | N-Channel | 800 V | 2.6 A | 2.25 Ohms | 4.5 V | 14 nC | SuperFET II | ||||||
|
774
In-stock
|
Fairchild Semiconductor | MOSFET 800V N-Channel QFET | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 2.4 A | 6.3 Ohms | Enhancement | QFET | ||||||
|
310
In-stock
|
Fairchild Semiconductor | MOSFET HIGH VOLTAGE | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 8 A | 1.55 Ohms | Enhancement |