- Rds On - Drain-Source Resistance :
6 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Channel Mode | |
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GET PRICE |
46,790
In-stock
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Fairchild Semiconductor | MOSFET 200V N-Ch adv QFET V2 Series | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 200 V | 15 A | 140 mOhms | Enhancement | ||
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4,492
In-stock
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Fairchild Semiconductor | MOSFET 200V N-Ch QFET Logic Level | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 200 V | 3 A | 1.4 Ohms | Enhancement | |||
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3,532
In-stock
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Fairchild Semiconductor | MOSFET N-CH/200V/10A/QFET | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 200 V | 7.8 A | 360 mOhms | Enhancement | |||
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3,308
In-stock
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Fairchild Semiconductor | MOSFET 200V N-Channel QFET | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 200 V | 9 A | 280 mOhms | Enhancement | |||
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2,773
In-stock
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Fairchild Semiconductor | MOSFET 200V N-CH MOSFET | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 200 V | 5 A | 690 mOhms | Enhancement | |||
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1,637
In-stock
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Fairchild Semiconductor | MOSFET 200V N Chanel MOSFET | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 200 V | 4.5 A | 800 mOhms | Enhancement |
