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Packaging :
Vds - Drain-Source Breakdown Voltage :
Rds On - Drain-Source Resistance :
6 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Channel Mode Tradename
FDD6N50FTM
1+
$1.090
10+
$0.924
100+
$0.710
500+
$0.628
2500+
$0.439
RFQ
1,801
In-stock
Fairchild Semiconductor MOSFET 500V N-Channel 30 V SMD/SMT TO-252-3 - 55 C + 150 C Reel 1 Channel Si N-Channel 500 V 5.5 A 1.15 Ohms Enhancement  
FQPF6N80C
1+
$1.520
10+
$1.300
100+
$0.994
500+
$0.879
RFQ
1,957
In-stock
Fairchild Semiconductor MOSFET 800V N-Ch Q-FET advance C-Series 30 V Through Hole TO-220FP-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 800 V 5.5 A 2.5 Ohms Enhancement QFET
FQPF6N80CT
1+
$1.540
10+
$1.310
100+
$1.050
500+
$0.911
RFQ
1,000
In-stock
Fairchild Semiconductor MOSFET 800V N-Ch Adv Q-FET C-Series 30 V Through Hole TO-220-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 800 V 5.5 A 2.5 Ohms Enhancement  
FQD7N30TM
Per Unit
$0.950
RFQ
25,000
In-stock
Fairchild Semiconductor MOSFET 300V N-Channel QFET 30 V SMD/SMT TO-252-3 - 55 C + 150 C Reel 1 Channel Si N-Channel 300 V 5.5 A 700 mOhms Enhancement  
FQP6N80C
1+
$1.470
10+
$1.260
100+
$0.963
500+
$0.851
RFQ
903
In-stock
Fairchild Semiconductor MOSFET 800V N-Ch Q-FET advance C-Series 30 V Through Hole TO-220-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 800 V 5.5 A 2.5 Ohms Enhancement QFET
FQP6N60C
1+
$1.120
10+
$0.955
100+
$0.734
500+
$0.648
RFQ
722
In-stock
Fairchild Semiconductor MOSFET 600V N-Channel Adv Q-FET C-Series 30 V Through Hole TO-220-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 600 V 5.5 A 2 Ohms Enhancement  
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