- Mounting Style :
- Package / Case :
- Rds On - Drain-Source Resistance :
- Tradename :
5 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Channel Mode | Tradename | |
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16,840
In-stock
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Fairchild Semiconductor | MOSFET 200V N-Channel Advance Q-FET | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 200 V | 19 A | 170 mOhms | Enhancement | QFET | |||
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1,900
In-stock
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Fairchild Semiconductor | MOSFET 200V N-Channel Advance Q-FET | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 200 V | 19 A | 170 mOhms | Enhancement | QFET | ||||
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1,531
In-stock
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Fairchild Semiconductor | MOSFET 200V N-Channel Adv Q-FET C-Series | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 200 V | 19 A | 170 mOhms | Enhancement | |||||
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738
In-stock
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Fairchild Semiconductor | MOSFET UniFET, 400V | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 400 V | 19 A | 240 mOhms | Enhancement | UniFET | ||||
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718
In-stock
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Fairchild Semiconductor | MOSFET 500V N-CH MOSFET | 30 V | Through Hole | TO-3PN-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 19 A | 265 mOhms | Enhancement |