- Mounting Style :
- Maximum Operating Temperature :
- Packaging :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
-
- - 10.5 A (1)
- - 11.5 A (2)
- - 13.2 A (1)
- - 15 A (2)
- - 16.5 A (1)
- - 2.1 A (2)
- - 2.7 A (1)
- - 2.8 A (1)
- - 22 A (1)
- - 3.1 A (1)
- - 3.4 A (1)
- - 3.5 A (1)
- - 36 A (1)
- - 5.2 A (1)
- - 6 A (2)
- - 8 A (1)
- - 9.4 A (2)
- 1.5 A (2)
- 1.9 A (1)
- 10 A (2)
- 11 A (4)
- 11.3 A (1)
- 11.4 A (1)
- 11.8 A (1)
- 12 A (1)
- 12.5 A (1)
- 12.6 A (1)
- 13 A (1)
- 14 A (1)
- 15 A (1)
- 15.6 A (1)
- 16 A (2)
- 18.5 A (1)
- 19 A (2)
- 19.4 A (1)
- 2 A (3)
- 2.2 A (1)
- 2.3 A (1)
- 2.4 A (2)
- 2.6 A (1)
- 200 mA (1)
- 21 A (1)
- 23.5 A (1)
- 25.5 A (1)
- 27 A (1)
- 28 A (2)
- 3 A (5)
- 3.2 A (1)
- 3.3 A (1)
- 3.9 A (1)
- 30 A (1)
- 32 A (1)
- 4 A (2)
- 4.3 A (1)
- 4.5 A (1)
- 40 A (2)
- 43.5 A (1)
- 45 A (2)
- 5 A (1)
- 5.5 A (2)
- 55 A (1)
- 6 A (7)
- 6.3 A (1)
- 6.6 A (2)
- 62 A (1)
- 65 A (1)
- 7 A (2)
- 7.2 A (1)
- 7.4 A (2)
- 8 A (7)
- 8.6 A (1)
- 8.8 A (1)
- 9 A (3)
- 9.1 A (1)
- 9.5 A (2)
- Rds On - Drain-Source Resistance :
-
- 1 Ohms (3)
- 1.1 Ohms (3)
- 1.3 Ohms (1)
- 1.4 Ohms (6)
- 1.45 Ohms (2)
- 1.55 Ohms (2)
- 1.6 Ohms (2)
- 1.9 Ohms (6)
- 1.95 Ohms (1)
- 11.5 Ohms (1)
- 110 mOhms (4)
- 125 mOhms (2)
- 140 mOhms (1)
- 150 mOhms (2)
- 160 mOhms (2)
- 170 mOhms (2)
- 185 mOhms (1)
- 190 mOhms (1)
- 2.1 Ohms (1)
- 2.2 Ohms (2)
- 2.3 Ohms (4)
- 2.5 Ohms (3)
- 2.7 Ohms (2)
- 200 mOhms (2)
- 230 mOhms (1)
- 240 mOhms (1)
- 270 mOhms (2)
- 290 mOhms (2)
- 3.1 Ohms (2)
- 3.4 Ohms (2)
- 3.6 Ohms (1)
- 32 mOhms (1)
- 320 mOhms (1)
- 35 mOhms (1)
- 360 mOhms (2)
- 380 mOhms (1)
- 4.2 Ohms (2)
- 4.7 Ohms (3)
- 4.8 Ohms (2)
- 4.9 Ohms (3)
- 40 mOhms (3)
- 420 mOhms (1)
- 430 mOhms (2)
- 450 mOhms (1)
- 470 mOhms (1)
- 480 mOhms (2)
- 530 mOhms (3)
- 540 mOhms (1)
- 550 mOhms (1)
- 6.3 Ohms (3)
- 610 mOhms (1)
- 620 mOhms (3)
- 69 mOhms (1)
- 690 mOhms (1)
- 7.2 Ohms (1)
- 70 mOhms (1)
- 750 mOhms (2)
- 82 mOhms (3)
- 850 mOhms (1)
- 90 mOhms (1)
- 960 mOhms (1)
- Applied Filters :
117 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
6,324
In-stock
|
Fairchild Semiconductor | MOSFET 250V 3.1A 2.1Ohm P-Channel | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 250 V | - 3.1 A | 2.1 Ohms | Enhancement | QFET | |||||
|
|
7,399
In-stock
|
Fairchild Semiconductor | MOSFET TO-252 DPAK P-CH 60V | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 9.4 A | 185 mOhms | Enhancement | QFET | |||||
|
|
5,574
In-stock
|
Fairchild Semiconductor | MOSFET 300V N-Channel QFET | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 300 V | 3.2 A | 2.2 Ohms | Enhancement | QFET | |||||
|
|
4,605
In-stock
|
Fairchild Semiconductor | MOSFET N-CH/500V 2.6A/2.7OHM | 30 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 2.6 A | 2.7 Ohms | Enhancement | QFET | |||||
|
|
3,631
In-stock
|
Fairchild Semiconductor | MOSFET 400V N-Channel QFET | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 400 V | 3 A | 1.6 Ohms | Enhancement | QFET | |||||
|
|
3,478
In-stock
|
Fairchild Semiconductor | MOSFET 250V P-Channel QFET | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 250 V | - 9.4 A | 620 mOhms | Enhancement | QFET | |||||
|
|
4,032
In-stock
|
Fairchild Semiconductor | MOSFET 500V P-Channel QFET | 30 V | SMD/SMT | Die | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 500 V | - 2.1 A | 4.9 Ohms | Enhancement | QFET | |||||
|
|
1,600
In-stock
|
Fairchild Semiconductor | MOSFET N-CH/900V/8A/QFET C-Series | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 900 V | 6.3 A | 1.6 Ohms | 5 V | 35 nC | Enhancement | QFET | |||
|
|
1,990
In-stock
|
Fairchild Semiconductor | MOSFET 500V N-Ch MOSFET | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 10 A | 610 mOhms | Enhancement | QFET | |||||
|
|
1,071
In-stock
|
Fairchild Semiconductor | MOSFET 1000V N-Channe MOSFET | 30 V | Through Hole | TO-3PN-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 8 A | 1.45 Ohms | Enhancement | QFET | |||||
|
|
1,058
In-stock
|
Fairchild Semiconductor | MOSFET N-CH/900V/7A/A.QFET | 30 V | Through Hole | TO-3PF-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 900 V | 7.2 A | 1.1 Ohms | Enhancement | QFET | |||||
|
|
582
In-stock
|
Fairchild Semiconductor | MOSFET 300V N-Channel QFET | 30 V | Through Hole | TO-3PN-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 300 V | 43.5 A | 69 mOhms | Enhancement | QFET | |||||
|
|
825
In-stock
|
Fairchild Semiconductor | MOSFET 600V N-Channel QFET | 30 V | Through Hole | TO-3PN-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 23.5 A | 240 mOhms | Enhancement | QFET | |||||
|
|
5,176
In-stock
|
Fairchild Semiconductor | MOSFET 600V 0.2A 11.5Ohm N-Channel | 30 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 200 mA | 11.5 Ohms | Enhancement | QFET | |||||
|
|
2,490
In-stock
|
Fairchild Semiconductor | MOSFET 600V 2.4A N-Channel Q-FET | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 2.4 A | 3.4 Ohms | 10.5 nC | Enhancement | QFET | ||||
|
|
2,362
In-stock
|
Fairchild Semiconductor | MOSFET N-CH/600V 3A/3.6OHM | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 3 A | 3.4 Ohms | Enhancement | QFET | |||||
|
|
1,820
In-stock
|
Fairchild Semiconductor | MOSFET N-CH/400 /6A/CFET | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 400 V | 6 A | 1.1 Ohms | Enhancement | QFET | |||||
|
|
1,869
In-stock
|
Fairchild Semiconductor | MOSFET 600V N-Ch Q-FET advance C-Series | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 4.5 A | 2.5 Ohms | Enhancement | QFET | |||||
|
|
GET PRICE |
16,840
In-stock
|
Fairchild Semiconductor | MOSFET 200V N-Channel Advance Q-FET | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 200 V | 19 A | 170 mOhms | Enhancement | QFET | ||||
|
|
1,900
In-stock
|
Fairchild Semiconductor | MOSFET 200V N-Channel Advance Q-FET | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 200 V | 19 A | 170 mOhms | Enhancement | QFET | |||||
|
|
868
In-stock
|
Fairchild Semiconductor | MOSFET N-CH/250V /16A/QFET | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 250 V | 15.6 A | 270 mOhms | Enhancement | QFET | |||||
|
|
1,309
In-stock
|
Fairchild Semiconductor | MOSFET 800V N-Channel QFET | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 1.5 A | 6.3 Ohms | Enhancement | QFET | |||||
|
|
1,223
In-stock
|
Fairchild Semiconductor | MOSFET 250V N-Channel QFET | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 250 V | 16 A | 230 mOhms | Enhancement | QFET | |||||
|
|
1,823
In-stock
|
Fairchild Semiconductor | MOSFET 200V N-Channel QFET | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 200 V | 19.4 A | 150 mOhms | Enhancement | QFET | |||||
|
|
1,728
In-stock
|
Fairchild Semiconductor | MOSFET 800V N-Channel QFET | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 3.9 A | 3.6 Ohms | Enhancement | QFET | |||||
|
|
1,503
In-stock
|
Fairchild Semiconductor | MOSFET 200V N-Channel Advance Q-FET | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 200 V | 28 A | 82 mOhms | Enhancement | QFET | |||||
|
|
1,957
In-stock
|
Fairchild Semiconductor | MOSFET 800V N-Ch Q-FET advance C-Series | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 5.5 A | 2.5 Ohms | Enhancement | QFET | |||||
|
|
1,158
In-stock
|
Fairchild Semiconductor | MOSFET 100V P-Channel QFET | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 100 V | - 13.2 A | 125 mOhms | Enhancement | QFET | |||||
|
|
1,762
In-stock
|
Fairchild Semiconductor | MOSFET 200V P-Channel QFET | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 200 V | - 11.5 A | 470 mOhms | Enhancement | QFET | |||||
|
|
1,310
In-stock
|
Fairchild Semiconductor | MOSFET 800V N-Ch Q-FET advance C-Series | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 6.6 A | 1.9 Ohms | Enhancement | QFET |
