- Rds On - Drain-Source Resistance :
- Tradename :
5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Channel Mode | Tradename | |
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886
In-stock
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Fairchild Semiconductor | MOSFET SupreMOS 16A | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 16 A | 170 mOhms | Enhancement | SupreMOS | |||
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1,223
In-stock
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Fairchild Semiconductor | MOSFET 250V N-Channel QFET | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 250 V | 16 A | 230 mOhms | Enhancement | QFET | |||
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1,032
In-stock
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Fairchild Semiconductor | MOSFET 400V N-Channel QFET | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 400 V | 16 A | 270 mOhms | Enhancement | QFET | |||
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496
In-stock
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Fairchild Semiconductor | MOSFET 600V N-CH MOSFET SuperFET | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 16 A | 260 mOhms | Enhancement | ||||
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23,996
In-stock
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Fairchild Semiconductor | MOSFET 600V N-CH SuperFET | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 16 A | 260 mOhms | Enhancement |
