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IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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Infineon Technologies MOSFET P-CH 40V 6.2A 8-SOIC 8-SOIC (0.154", 3.90mm Width) HEXFET® Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) 8-SO 0 3800 P-Channel - 40V 6.2A (Ta) 41 mOhm @ 6.2A, 10V 3V @ 250µA 80nC @ 10V 3220pF @ 25V 4.5V, 10V ±20V 2.5W (Ta)
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Infineon Technologies MOSFET P-CH 40V 6.2A 8-SOIC 8-SOIC (0.154", 3.90mm Width) HEXFET® Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete 8-SO 0 4000 P-Channel - 40V 6.2A (Ta) 41 mOhm @ 6.2A, 10V 3V @ 250µA 80nC @ 10V 3220pF @ 25V 4.5V, 10V ±20V 2.5W (Ta)
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Infineon Technologies MOSFET P-CH 40V 6.2A 8-SOIC 8-SOIC (0.154", 3.90mm Width) HEXFET® Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete 8-SO 0 95 P-Channel - 40V 6.2A (Ta) 41 mOhm @ 6.2A, 10V 3V @ 250µA 80nC @ 10V 3220pF @ 25V 4.5V, 10V ±20V 2.5W (Ta)
IRF7241TRPBF
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Infineon Technologies MOSFET P-CH 40V 6.2A 8-SOIC 8-SOIC (0.154", 3.90mm Width) HEXFET® Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active 8-SO 0 4000 P-Channel - 40V 6.2A (Ta) 41 mOhm @ 6.2A, 10V 3V @ 250µA 80nC @ 10V 3220pF @ 25V 4.5V, 10V ±20V 2.5W (Ta)
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