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Drain to Source Voltage (Vdss) :
Drive Voltage (Max Rds On, Min Rds On) :
11 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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Infineon Technologies MOSFET N-CH 20V 39A D2PAK TO-263-3, D²Pak (2 Leads + Tab), TO-263AB HEXFET® Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete D2PAK 0 3200 N-Channel - 20V 39A (Tc) 20 mOhm @ 23A, 7V 700mV @ 250µA 31nC @ 4.5V 1300pF @ 15V 4.5V, 7V ±10V 57W (Tc)
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Infineon Technologies MOSFET N-CH 20V 39A TO-220AB TO-220-3 HEXFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Obsolete TO-220AB 0 3000 N-Channel - 20V 39A (Tc) 20 mOhm @ 23A, 7V 700mV @ 250µA 31nC @ 4.5V 1300pF @ 15V 4.5V, 7V ±10V 57W (Tc)
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Infineon Technologies MOSFET N-CH 20V 39A D2PAK TO-263-3, D²Pak (2 Leads + Tab), TO-263AB HEXFET® Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete D2PAK 0 3200 N-Channel - 20V 39A (Tc) 20 mOhm @ 23A, 7V 700mV @ 250µA 31nC @ 4.5V 1300pF @ 15V 4.5V, 7V ±10V 57W (Tc)
IRFIZ48VPBF
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5,000
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Infineon Technologies MOSFET N-CH 60V 39A TO220FP TO-220-3 Full Pack HEXFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Obsolete TO-220AB Full-Pak 0 500 N-Channel - 60V 39A (Tc) 12 mOhm @ 43A, 10V 4V @ 250µA 110nC @ 10V 1985pF @ 25V 10V ±20V 43W (Tc)
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Infineon Technologies MOSFET N-CH 20V 39A D2PAK TO-263-3, D²Pak (2 Leads + Tab), TO-263AB HEXFET® Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete D2PAK 0 800 N-Channel - 20V 39A (Tc) 20 mOhm @ 23A, 7V 700mV @ 250µA 31nC @ 4.5V 1300pF @ 15V 4.5V, 7V ±10V 57W (Tc)
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Infineon Technologies MOSFET N-CH 20V 39A D2PAK TO-263-3, D²Pak (2 Leads + Tab), TO-263AB HEXFET® Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete D2PAK 0 800 N-Channel - 20V 39A (Tc) 20 mOhm @ 23A, 7V 700mV @ 250µA 31nC @ 4.5V 1300pF @ 15V 4.5V, 7V ±10V 57W (Tc)
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Infineon Technologies MOSFET N-CH 20V 39A D2PAK TO-263-3, D²Pak (2 Leads + Tab), TO-263AB HEXFET® Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete D2PAK 0 50 N-Channel - 20V 39A (Tc) 20 mOhm @ 23A, 7V 700mV @ 250µA 31nC @ 4.5V 1300pF @ 15V 4.5V, 7V ±10V 57W (Tc)
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Infineon Technologies MOSFET N-CH 20V 39A TO-220AB TO-220-3 HEXFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Obsolete TO-220AB 0 50 N-Channel - 20V 39A (Tc) 20 mOhm @ 23A, 7V 700mV @ 250µA 31nC @ 4.5V 1300pF @ 15V 4.5V, 7V ±10V 57W (Tc)
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Infineon Technologies MOSFET N-CH 55V 53A TO-262 TO-262-3 Long Leads, I²Pak, TO-262AA HEXFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Last Time Buy TO-262 0 1000 N-Channel - 55V 39A (Tc) 16.5 mOhm @ 28A, 10V 4V @ 250µA 72nC @ 10V 1696pF @ 25V 10V ±20V 3.8W (Ta), 107W (Tc)
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3,000
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Infineon Technologies MOSFET N-CH 4VSON 4-PowerTSFN CoolMOS™ P7 Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -40°C ~ 150°C (TJ) Active PG-VSON-4 0 3000 N-Channel - 650V 39A (Tc) 85 mOhm @ 11.8A, 10V 4V @ 590µA 51nC @ 10V 2180pF @ 400V 10V ±20V 154W (Tc)
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102
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Infineon Technologies MOSFET N-CH 650V 39A TO-247 TO-247-3 CoolMOS™ Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Not For New Designs PG-TO247-3 0 1 N-Channel - 650V 39A (Tc) 75 mOhm @ 26A, 10V 3.5V @ 1.7mA 116nC @ 10V 4000pF @ 100V 10V ±20V 313W (Tc)
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