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IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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Infineon Technologies MOSFET P-CH 100V 6.6A I-PAK TO-251-3 Short Leads, IPak, TO-251AA HEXFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Obsolete IPAK (TO-251) 0 75 P-Channel - 100V 6.6A (Tc) 480 mOhm @ 3.9A, 10V 4V @ 250µA 27nC @ 10V 350pF @ 25V 10V ±20V 40W (Tc)
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121
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Infineon Technologies MOSFET P-CH 100V 6.6A DPAK TO-252-3, DPak (2 Leads + Tab), SC-63 HEXFET® Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) D-PAK 0 1 P-Channel - 100V 6.6A (Tc) 480 mOhm @ 3.9A, 10V 4V @ 250µA 27nC @ 10V 350pF @ 25V 10V ±20V 40W (Tc)
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RFQ
56,000
In-stock
Infineon Technologies MOSFET P-CH 100V 6.6A DPAK TO-252-3, DPak (2 Leads + Tab), SC-63 HEXFET® Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active D-PAK 0 2000 P-Channel - 100V 6.6A (Tc) 480 mOhm @ 3.9A, 10V 4V @ 250µA 27nC @ 10V 350pF @ 25V 10V ±20V 40W (Tc)
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