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4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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VIEW | Infineon Technologies | MOSFET N-CH 100V 100A TO220-3 | TO-220-3 | OptiMOS™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Obsolete | PG-TO-220-3 | 0 | 500 | N-Channel | - | 100V | 100A (Tc) | 5.1 mOhm @ 100A, 10V | 2.4V @ 250µA | 163nC @ 10V | 15600pF @ 50V | 4.5V, 10V | ±20V | 300W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 100V 100A TO263-3 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | OptiMOS™ | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Obsolete | D²PAK (TO-263AB) | 0 | 1000 | N-Channel | - | 100V | 100A (Tc) | 5.1 mOhm @ 100A, 10V | 4V @ 250µA | 181nC @ 10V | 12000pF @ 50V | 10V | ±20V | 300W (Tc) | |||
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In-stock
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Infineon Technologies | MOSFET N-CH 100V 100A TO220-3 | TO-220-3 | OptiMOS™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Not For New Designs | PG-TO220-3-1 | 0 | 1 | N-Channel | - | 100V | 100A (Tc) | 5.1 mOhm @ 100A, 10V | 4V @ 240µA | 176nC @ 10V | 11570pF @ 25V | 10V | ±20V | 300W (Tc) | ||
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VIEW | Infineon Technologies | MOSFET N-CH 120V 100A TO263-3 | TO-263-4, D²Pak (3 Leads + Tab), TO-263AA | OptiMOS™ | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | PG-TO263-3 | 0 | 1000 | N-Channel | - | 120V | 100A (Tc) | 5.1 mOhm @ 100A, 10V | 4V @ 240µA | 185nC @ 10V | 11570pF @ 25V | 10V | ±20V | 300W (Tc) |
