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Part Status :
Power Dissipation (Max) :
2 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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Infineon Technologies MOSFET P-CH 250V 0.14A SC-59 TO-236-3, SC-59, SOT-23-3 SIPMOS® Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) PG-SC-59 0 3000 P-Channel - 250V 140mA (Ta) 11 Ohm @ 140mA, 10V 1V @ 130µA 4.8nC @ 10V 109pF @ 25V 2.8V, 10V ±20V 500mW (Ta)
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Infineon Technologies MOSFET P-CH 250V 140MA SC-59-3 TO-236-3, SC-59, SOT-23-3 SIPMOS® Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active PG-SC-59 0 3000 P-Channel - 250V 140mA (Ta) 11 Ohm @ 140mA, 10V 1V @ 130µA 4.8nC @ 10V 109pF @ 25V 2.8V, 10V ±20V 500mW (Tc)
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