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Drain to Source Voltage (Vdss) :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
3 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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Per Unit
$1.370
RFQ
674
In-stock
Infineon Technologies MOSFET N-CH 40V 80A TO220-3 TO-220-3 OptiMOS™ Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Active PG-TO220-3-1 0 1 N-Channel - 40V 80A (Tc) 4.1 mOhm @ 80A, 10V 4V @ 45µA 56nC @ 10V 4500pF @ 20V 10V ±20V 94W (Tc)
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Per Unit
$1.370
RFQ
562
In-stock
Infineon Technologies MOSFET N-CH 40V 80A TO220-3 TO-220-3 OptiMOS™ Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Active PG-TO220-3-1 0 1 N-Channel - 40V 80A (Tc) 3.9 mOhm @ 80A, 10V 2V @ 45µA 78nC @ 10V 6100pF @ 25V 4.5V, 10V ±20V 94W (Tc)
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Per Unit
$1.860
RFQ
1,495
In-stock
Infineon Technologies MOSFET N-CH 30V 80A TO-220-3 TO-220-3 OptiMOS™ Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Active PG-TO220-3-1 0 1 N-Channel - 30V 80A (Tc) 3.4 mOhm @ 30A, 10V 2.2V @ 250µA 51nC @ 10V 5300pF @ 15V 4.5V, 10V ±20V 94W (Tc)
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