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IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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Infineon Technologies MOSFET N-CH 500V 13A PG-TO247 TO-247-3 CoolMOS™ Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Obsolete PG-TO247-3 0 240 N-Channel Super Junction 500V 13A (Tc) 280 mOhm @ 4.2A, 13V 3.5V @ 350µA 32.6nC @ 10V 773pF @ 100V 13V ±20V 92W (Tc)
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Infineon Technologies MOSFET N-CH 60V 57A D2PAK TO-263-3, D²Pak (2 Leads + Tab), TO-263AB HEXFET® Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) Obsolete D2PAK 0 800 N-Channel - 60V 57A (Tc) 12 mOhm @ 34A, 10V 4V @ 250µA 65nC @ 10V 1690pF @ 25V 10V ±20V 92W (Tc)
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Infineon Technologies MOSFET N-CH 100V 36A TO-220AB TO-220-3 HEXFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Obsolete TO-220AB 0 250 N-Channel - 100V 36A (Tc) 26.5 mOhm @ 22A, 10V 4V @ 250µA 63nC @ 10V 1770pF @ 25V 10V ±20V 92W (Tc)
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Infineon Technologies MOSFET N-CH 100V 36A D2PAK TO-263-3, D²Pak (2 Leads + Tab), TO-263AB HEXFET® Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) Obsolete D2PAK 0 800 N-Channel - 100V 36A (Tc) 26.5 mOhm @ 22A, 10V 4V @ 250µA 63nC @ 10V 1770pF @ 25V 10V ±20V 92W (Tc)
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Infineon Technologies MOSFET N-CH 100V 36A D2PAK TO-263-3, D²Pak (2 Leads + Tab), TO-263AB HEXFET® Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) Obsolete D2PAK 0 800 N-Channel - 100V 36A (Tc) 26.5 mOhm @ 22A, 10V 4V @ 250µA 63nC @ 10V 1770pF @ 25V 10V ±20V 92W (Tc)
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Infineon Technologies MOSFET N-CH 100V 36A TO-262 TO-262-3 Long Leads, I²Pak, TO-262AA HEXFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Obsolete TO-262 0 250 N-Channel - 100V 36A (Tc) 26.5 mOhm @ 22A, 10V 4V @ 250µA 63nC @ 10V 1770pF @ 25V 10V ±20V 92W (Tc)
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Infineon Technologies MOSFET N-CH 100V 36A D2PAK TO-263-3, D²Pak (2 Leads + Tab), TO-263AB HEXFET® Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) Obsolete D2PAK 0 250 N-Channel - 100V 36A (Tc) 26.5 mOhm @ 22A, 10V 4V @ 250µA 63nC @ 10V 1770pF @ 25V 10V ±20V 92W (Tc)
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Infineon Technologies MOSFET N-CH 60V 57A TO-262 TO-262-3 Long Leads, I²Pak, TO-262AA HEXFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Obsolete TO-262 0 50 N-Channel - 60V 57A (Tc) 12 mOhm @ 34A, 10V 4V @ 250µA 65nC @ 10V 1690pF @ 25V 10V ±20V 92W (Tc)
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Infineon Technologies MOSFET N-CH 60V 57A D2PAK TO-263-3, D²Pak (2 Leads + Tab), TO-263AB HEXFET® Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) Obsolete D2PAK 0 50 N-Channel - 60V 57A (Tc) 12 mOhm @ 34A, 10V 4V @ 250µA 65nC @ 10V 1690pF @ 25V 10V ±20V 92W (Tc)
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Infineon Technologies MOSFET N-CH 60V 57A TO-220AB TO-220-3 HEXFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Obsolete TO-220AB 0 50 N-Channel - 60V 57A (Tc) 12 mOhm @ 34A, 10V 4V @ 250µA 65nC @ 10V 1690pF @ 25V 10V ±20V 92W (Tc)
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