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Packaging :
Rds On - Drain-Source Resistance :
3 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Channel Mode Tradename
IPA60R800CEXKSA1
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RFQ
443
In-stock
Infineon Technologies MOSFET N-Ch 600V 5.6A TO220FP-3 20 V Through Hole TO-220FP-3 - 40 C + 150 C Tube 1 Channel Si N-Channel 600 V 5.6 A 800 mOhms 2.5 V 17.2 nC Enhancement CoolMOS
IPD60R800CEATMA1
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RFQ
473
In-stock
Infineon Technologies MOSFET N-Ch 600V 5.6A DPAK-2 20 V SMD/SMT TO-252-3 - 40 C + 150 C Reel 1 Channel Si N-Channel 600 V 5.6 A 800 mOhms 2.5 V 17.2 nC Enhancement CoolMOS
IPD60R600P6
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RFQ
156
In-stock
Infineon Technologies MOSFET N-Ch 600V 7.3A DPAK-2 CoolMOS P6   SMD/SMT TO-252-3     Reel 1 Channel Si N-Channel 600 V 5.6 A 600 Ohms       CoolMOS
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