- Mounting Style :
- Package / Case :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
7 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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657
In-stock
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Infineon Technologies | MOSFET N-Ch 75V 100A TO220-3 OptiMOS 3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 75 V | 120 A | 2.1 mOhms | 2.3 V | 206 nC | Enhancement | OptiMOS | ||||
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932
In-stock
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Infineon Technologies | MOSFET N-Ch 75V 120A D2PAK-2 OptiMOS 3 | 2.3 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 75 V | 120 A | 2 mOhms | 3.8 V | 206 nC | OptiMOS | |||||
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257
In-stock
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Infineon Technologies | MOSFET MOSFT 75V 120A 5.8mOhm 79nC Qg | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 75 V | 120 A | 4.6 mOhms | 79 nC | |||||||||
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582
In-stock
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Infineon Technologies | MOSFET 75V 1 N-CH HEXFET 5.8mOhms 79nC | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 75 V | 120 A | 4.6 mOhms | 2 V to 4 V | 79 nC | Enhancement | |||||
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165
In-stock
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Infineon Technologies | MOSFET N-Ch 75V 100A TO220-3 OptiMOS 3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 75 V | 120 A | 2.1 mOhms | 2.3 V | 206 nC | Enhancement | OptiMOS | ||||
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290
In-stock
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Infineon Technologies | MOSFET MOSFT 75V 130A 6.3mOhm 120nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 75 V | 120 A | 5 mOhms | 4 V | 120 nC | ||||||
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VIEW | Infineon Technologies | MOSFET 75V 1 N-CH HEXFET 5.8mOhms 79nC | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 75 V | 120 A | 5.8 mOhms | 4 V | 79 nC |