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Package / Case :
Packaging :
Vds - Drain-Source Breakdown Voltage :
6 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Channel Mode Tradename
IPB027N10N3 G
1+
$4.870
10+
$4.140
100+
$3.590
250+
$3.400
1000+
$2.580
RFQ
2,465
In-stock
Infineon Technologies MOSFET N-Ch 100V 120A D2PAK-2 OptiMOS 3 20 V SMD/SMT TO-263-3 - 55 C + 175 C Reel 1 Channel Si N-Channel 100 V 120 A 2.3 mOhms 2 V 206 nC Enhancement OptiMOS
IPB027N10N3GATMA1
1+
$4.870
10+
$4.140
100+
$3.590
250+
$3.400
1000+
$2.580
RFQ
218
In-stock
Infineon Technologies MOSFET N-Ch 100V 120A D2PAK-2 OptiMOS 3 20 V SMD/SMT TO-263-3 - 55 C + 175 C Reel 1 Channel Si N-Channel 100 V 120 A 2.3 mOhms 2 V 206 nC Enhancement OptiMOS
IPB029N06N3 G
1+
$1.700
10+
$1.440
100+
$1.160
500+
$1.010
1000+
$0.836
RFQ
1,867
In-stock
Infineon Technologies MOSFET N-Ch 60V 120A D2PAK-2 OptiMOS 3 20 V SMD/SMT TO-263-3 - 55 C + 175 C Reel 1 Channel Si N-Channel 60 V 120 A 2.3 mOhms 2 V 165 nC Enhancement OptiMOS
IPB029N06N3GATMA1
1+
$1.700
10+
$1.440
100+
$1.160
500+
$1.010
1000+
$0.836
RFQ
1,000
In-stock
Infineon Technologies MOSFET N-Ch 60V 120A D2PAK-2 OptiMOS 3 20 V SMD/SMT TO-263-3 - 55 C + 175 C Reel 1 Channel Si N-Channel 60 V 120 A 2.3 mOhms 2 V 165 nC Enhancement OptiMOS
IPP120N04S3-02
1+
$2.680
10+
$2.280
100+
$1.830
500+
$1.600
VIEW
RFQ
Infineon Technologies MOSFET N-Ch 40V 120A TO220-3 OptiMOS-T 20 V Through Hole TO-220-3 - 55 C + 175 C Tube 1 Channel Si N-Channel 40 V 120 A 2.3 mOhms     Enhancement OptiMOS
IPB120N06S4-03
GET PRICE
RFQ
2,700
In-stock
Infineon Technologies MOSFET N-Ch 60V 120A D2PAK-2 OptiMOS-T2 20 V SMD/SMT TO-263-3 - 55 C + 175 C Reel 1 Channel Si N-Channel 60 V 120 A 2.3 mOhms 2 V 160 nC Enhancement OptiMOS
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