- Mounting Style :
- Package / Case :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
16 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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6,000
In-stock
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Infineon Technologies | MOSFET N-Ch 80V 120A D2PAK-2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 80 V | 120 A | 2.7 mOhms | 2.2 V | 87 nC | Enhancement | ||||
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637
In-stock
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Infineon Technologies | MOSFET N-Ch 80V 120A D2PAK-2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 80 V | 120 A | 1.5 mOhms | 2.2 V | 223 nC | Enhancement | ||||
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633
In-stock
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Infineon Technologies | MOSFET N-Ch 100V 120A D2PAK-2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 120 A | 1.7 mOhms | 2.2 V | 210 nC | Enhancement | ||||
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1,374
In-stock
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Infineon Technologies | MOSFET N-Ch 100V 120A TO220-3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 120 A | 3.8 mOhms | 2.2 V | 112 nC | Enhancement | ||||
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1,090
In-stock
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Infineon Technologies | MOSFET N-Ch 80V 120A D2PAK-2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 80 V | 120 A | 2.5 mOhms | 2.2 V | 133 nC | Enhancement | ||||
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649
In-stock
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Infineon Technologies | MOSFET N-Ch 80V 120A TO220-3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 80 V | 120 A | 1.8 mOhms | 2.2 V | 223 nC | Enhancement | ||||
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2,015
In-stock
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Infineon Technologies | MOSFET N-Ch 80V 120A TO220-3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 80 V | 120 A | 4.4 mOhms | 2.2 V | 69 nC | Enhancement | ||||
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4,800
In-stock
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Infineon Technologies | MOSFET N-Ch 100V 120A D2PAK-2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 120 A | 1.7 mOhms | 2.2 V | 210 nC | Enhancement | ||||
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917
In-stock
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Infineon Technologies | MOSFET N-Ch 80V 120A D2PAK-2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 80 V | 120 A | 2.7 mOhms | 2.2 V | 87 nC | Enhancement | ||||
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349
In-stock
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Infineon Technologies | MOSFET N-Ch 80V 120A TO220-3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 80 V | 120 A | 1.8 mOhms | 2.2 V | 223 nC | Enhancement | ||||
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579
In-stock
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Infineon Technologies | MOSFET N-Ch 100V 120A D2PAK-2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 120 A | 3.5 mOhms | 2.2 V | 112 nC | Enhancement | ||||
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287
In-stock
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Infineon Technologies | MOSFET N-Ch 80V 120A D2PAK-2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 80 V | 120 A | 1.5 mOhms | 2.2 V | 223 nC | Enhancement | ||||
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395
In-stock
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Infineon Technologies | MOSFET N-Ch 80V 120A TO220-3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 80 V | 120 A | 3.4 mOhms | 2.2 V | 99 nC | Enhancement | ||||
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189
In-stock
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Infineon Technologies | MOSFET N-Ch 80V 120A TO220-3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 80 V | 120 A | 2.8 mOhms | 2.2 V | 133 nC | Enhancement | ||||
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370
In-stock
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Infineon Technologies | MOSFET N-Ch 80V 120A D2PAK-2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 80 V | 120 A | 3.1 mOhms | 2.2 V | 99 nC | Enhancement | ||||
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GET PRICE |
50,000
In-stock
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Infineon Technologies | MOSFET N-Ch 100V 120A TO220-3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 120 A | 2 mOhms | 2.2 V | 210 nC | Enhancement |