- Vgs - Gate-Source Voltage :
- Mounting Style :
- Package / Case :
- Qg - Gate Charge :
5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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2,436
In-stock
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Infineon Technologies | MOSFET N-Ch 800V 5.7A DPAK-2 | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 800 V | 5.7 A | 800 mOhms | 3 V | 31 nC | CoolMOS | ||||
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537
In-stock
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Infineon Technologies | MOSFET N-Ch 900V 6.9A TO220FP-3 CoolMOS C3 | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 900 V | 6.9 A | 800 mOhms | 42 nC | Enhancement | CoolMOS | ||||
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628
In-stock
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Infineon Technologies | MOSFET N-Ch 900V 6.9A TO220-3 CoolMOS C3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 900 V | 6.9 A | 800 mOhms | Enhancement | CoolMOS | |||||
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1,396
In-stock
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Infineon Technologies | MOSFET N-Ch 800V 5.7A IPAK-3 | +/- 20 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 5.7 A | 800 mOhms | 2.1 V | 31 nC | Enhancement | CoolMOS | |||
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454
In-stock
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Infineon Technologies | MOSFET N-Ch 500V 5A TO220FP-3 | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 5 A | 800 mOhms | 3 V | 12.4 nC | CoolMOS |
