- Mounting Style :
- Package / Case :
- Maximum Operating Temperature :
5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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4,694
In-stock
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Infineon Technologies | MOSFET 30V 1 N-CH HEXFET 4.8mOhms 17nC | 20 V | SMD/SMT | SO-8 | Tube | 1 Channel | Si | N-Channel | 30 V | 18 A | 6.8 mOhms | 17 nC | ||||||||
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19,880
In-stock
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Infineon Technologies | MOSFET MOSFT 30V 78A 4.8mOhm 15nC Qg | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 30 V | 92 A | 6.8 mOhms | 15 nC | ||||||||
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5,272
In-stock
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Infineon Technologies | MOSFET MOSFET, 30V, 25A, 4 3nC Qg, PQFN 3.3x3.3 | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 16 A | 6.8 mOhms | 1.7 V | 26 nC | Enhancement | ||||
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40,000
In-stock
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Infineon Technologies | MOSFET MOSFT 30V 18A 4.8mOhm 17nC Qg | 20 V | SMD/SMT | SO-8 | Reel | 1 Channel | Si | N-Channel | 30 V | 18 A | 6.8 mOhms | 17 nC | ||||||||
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548
In-stock
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Infineon Technologies | MOSFET N-Ch 40V 70A DPAK-2 OptiMOS-T | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 70 A | 6.8 mOhms | Enhancement | OptiMOS |
