- Mounting Style :
- Package / Case :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Qg - Gate Charge :
- Applied Filters :
3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Qg - Gate Charge | Channel Mode | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
GET PRICE |
609,400
In-stock
|
Infineon Technologies | MOSFET MOSFT PCh -20V -4.3A 54mOhm -2.5V cpbl | 12 V | SMD/SMT | SOT-23-3 | Reel | Si | P-Channel | - 20 V | - 4.3 A | 54 mOhms | 6.9 nC | ||||||
|
|
GET PRICE |
384
In-stock
|
Infineon Technologies | MOSFET 200V 1 N-CH HEXFET 54mOhms 60nC | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 44 A | 54 mOhms | 60 nC | Enhancement | ||
|
|
GET PRICE |
8,500
In-stock
|
Infineon Technologies | MOSFET MOSFT 200V 44A 54mOhm 60nC | 30 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 44 A | 54 mOhms | 60 nC | Enhancement |
