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Package / Case :
Packaging :
Vds - Drain-Source Breakdown Voltage :
Id - Continuous Drain Current :
Vgs th - Gate-Source Threshold Voltage :
Qg - Gate Charge :
4 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Channel Mode Tradename
IPP120N20NFD
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RFQ
785
In-stock
Infineon Technologies MOSFET N-Ch 200V 84A TO220-3 20 V Through Hole TO-220-3 - 55 C + 175 C Tube 1 Channel Si N-Channel 200 V 84 A 10.6 mOhms 2 V 65 nC Enhancement  
IPP120N20NFDAKSA1
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RFQ
1,732
In-stock
Infineon Technologies MOSFET N-Ch 200V 84A TO220-3 20 V Through Hole TO-220-3 - 55 C + 175 C Tube 1 Channel Si N-Channel 200 V 84 A 10.6 mOhms 2 V 65 nC Enhancement OptiMOS
IRLR8259TRPBF
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RFQ
2,967
In-stock
Infineon Technologies MOSFET MOSFT 25V 57A 8.7mOhm 6.8nC LogLvl 20 V SMD/SMT TO-252-3 - 55 C + 175 C Reel 1 Channel Si N-Channel 25 V 57 A 10.6 mOhms 1.9 V 6.8 nC    
IPD30N06S2L13ATMA4
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RFQ
12,500
In-stock
Infineon Technologies MOSFET N-CHANNEL_55/60V 20 V SMD/SMT TO-252-3 - 55 C + 175 C Reel 1 Channel Si N-Channel 55 V 30 A 10.6 mOhms 1.2 V 69 nC Enhancement  
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