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- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
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7 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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265
In-stock
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Infineon Technologies | MOSFET 300V, 40A, 69 mOhm 83 nC Qg, TO-220AB | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 300 V | 38 A | 56 mOhms | 5 V | 125 nC | Enhancement | ||
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14,000
In-stock
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Infineon Technologies | MOSFET 300V, 70A, 32 mOhm 180 nC Qg, TO-247AC | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | Si | N-Channel | 300 V | 70 A | 32 mOhms | 5 V | 270 nC | Enhancement | ||||
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1,156
In-stock
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Infineon Technologies | MOSFET MOSFT 150V 24A 95mOhm 30nC | SMD/SMT | TO-252-3 | + 175 C | Reel | 1 Channel | Si | N-Channel | 150 V | 24 A | 95 mOhms | 5 V | 45 nC | |||||
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825
In-stock
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Infineon Technologies | MOSFET 150V 1 N-CH HEXFET 95mOhms 30nC | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 24 A | 82 mOhms | 5 V | 30 nC | Enhancement | ||
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GET PRICE |
217
In-stock
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Infineon Technologies | MOSFET 300V, 40A, 69 mOhm 83 nC Qg, TO-247AC | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 300 V | 38 A | 69 mOhms | 5 V | 125 nC | Enhancement | |||
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GET PRICE |
152
In-stock
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Infineon Technologies | MOSFET Auto Q101 300V SGL N-CH HEXFET | 20 V | Through Hole | TO-247-3 | Tube | 1 Channel | Si | N-Channel | 300 V | 38 A | 56 mOhms | 5 V | 83 nC | |||||
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VIEW | Infineon Technologies | MOSFET AUTO 150V 1 N-CH HEXFET 42mOhms | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 150 V | 33 A | 42 mOhms | 5 V | 26 nC | Enhancement |
