MOSFET - Kaimeite

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6 products

IMAGE	PART NO.	PRICE	QUANTITY		STOCK	MANUFACTURE	DESCRIPTION	Vgs - Gate-Source Voltage	Mounting Style	Package / Case	Minimum Operating Temperature	Maximum Operating Temperature	Packaging	Number of Channels	Technology	Transistor Polarity	Vds - Drain-Source Breakdown Voltage	Id - Continuous Drain Current	Rds On - Drain-Source Resistance	Vgs th - Gate-Source Threshold Voltage	Qg - Gate Charge	Channel Mode	Tradename
	IPA60R520C6		GET PRICE	PDF RFQ	479 In-stock	Infineon Technologies	MOSFET N-Ch 600V 8.1A TO220FP-3 CoolMOS C6	20 V	Through Hole	TO-220FP-3	- 55 C	+ 150 C	Tube	1 Channel	Si	N-Channel	600 V	8.1 A	470 mOhms	2.5 V	23.4 nC	Enhancement	CoolMOS
	IPP60R520C6		GET PRICE	PDF RFQ	276 In-stock	Infineon Technologies	MOSFET N-Ch 600V 8.1A TO220-3 CoolMOS C6	20 V	Through Hole	TO-220-3	- 55 C	+ 150 C	Tube	1 Channel	Si	N-Channel	600 V	8.1 A	470 mOhms	2.5 V	23.4 nC	Enhancement	CoolMOS
	IPA60R520E6		GET PRICE	PDF RFQ	360 In-stock	Infineon Technologies	MOSFET N-Ch 650V 8.1A TO220FP-3 CoolMOS E6	20 V	Through Hole	TO-220FP-3	- 55 C	+ 150 C	Tube	1 Channel	Si	N-Channel	600 V	8.1 A	470 mOhms		23.4 nC		CoolMOS
	IPA60R520C6XKSA1		GET PRICE	PDF RFQ	850 In-stock	Infineon Technologies	MOSFET N-Ch 600V 8.1A TO220FP-3 CoolMOS C6	20 V	Through Hole	TO-220FP-3	- 55 C	+ 150 C	Tube	1 Channel	Si	N-Channel	600 V	8.1 A	470 mOhms	2.5 V	23.4 nC	Enhancement	CoolMOS
	IPP60R520C6XKSA1		GET PRICE	PDF RFQ	500 In-stock	Infineon Technologies	MOSFET N-Ch 600V 8.1A TO220-3 CoolMOS C6	20 V	Through Hole	TO-220-3	- 55 C	+ 150 C	Tube	1 Channel	Si	N-Channel	600 V	8.1 A	470 mOhms	2.5 V	23.4 nC	Enhancement	CoolMOS
	IPD60R520C6		GET PRICE	PDF RFQ	1,160 In-stock	Infineon Technologies	MOSFET N-Ch 600V 8.1A DPAK-2 CoolMOS C6	20 V	SMD/SMT	TO-252-3	- 55 C	+ 150 C	Reel	1 Channel	Si	N-Channel	600 V	8.1 A	520 mOhms		23.4 nC	Enhancement	CoolMOS

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