- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Applied Filters :
5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Tradename | |
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4,739
In-stock
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Infineon Technologies | MOSFET 30V SGL P-CH HEXFET Pwr MOSFET | 25 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 11 A | 18 mOhms | - 1.8 V | 16 nC | SmallPowIR | |||
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4,000
In-stock
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Infineon Technologies | MOSFET 30V SGL N-CH HEXFET Pwr MOSFET | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 13 A | 11.2 mOhms | 1.8 V | 15 nC | SmallPowIR | |||
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2,962
In-stock
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Infineon Technologies | MOSFET 30V SGL N-CH HEXFET Pwr MOSFET | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 16 A | 7.7 mOhms | 1.8 V | 20 nC | SmallPowIR | |||
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2,611
In-stock
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Infineon Technologies | MOSFET 30V 3.8nC SGL N-CH HEXFET Pwr MOSFET | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 10 A | 20 mOhms | 1.8 V | 10 nC | SmallPowIR | |||
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4,015
In-stock
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Infineon Technologies | MOSFET 25V 7.3nC SGL N-CH HEXFET Pwr MOSFET | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 16 A | 10.3 mOhms | 1.8 V | 7.7 nC | SmallPowIR |
