- Series :
- FET Type :
- FET Feature :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
- Applied Filters :
6 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | Power - Max | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
VIEW | Infineon Technologies | MOSFET P-CH 12V 16A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-SO | 0 | 665 | P-Channel | - | 12V | 16A (Ta) | 7 mOhm @ 16A, 4.5V | 600mV @ 500µA | 212nC @ 5V | 17179pF @ 10V | 2.5V, 4.5V | ±12V | 2.5W (Ta) | ||||
|
|
|
VIEW | Infineon Technologies | MOSFET N-CH 200V 3.7A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-SO | 0 | 665 | N-Channel | - | 200V | 3.7A (Ta) | 79 mOhm @ 2.2A, 10V | 2.5V @ 250µA | 59nC @ 10V | 1820pF @ 25V | 10V | ±20V | 2.5W (Ta) | ||||
|
|
|
VIEW | Infineon Technologies | MOSFET N-CH 28V 11A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-SO | 0 | 665 | N-Channel | - | 28V | 11A (Ta) | 10 mOhm @ 11A, 10V | 3V @ 250µA | 26nC @ 4.5V | 1760pF @ 15V | 4.5V | ±12V | 2.5W (Ta) | ||||
|
|
|
VIEW | Infineon Technologies | MOSFET N-CH 150V 3.6A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | - | Obsolete | 8-SO | 0 | 665 | N-Channel | - | 150V | 3.6A (Ta) | 90 mOhm @ 2.2A, 10V | 5.5V @ 250µA | 41nC @ 10V | 990pF @ 25V | 10V | ±30V | 2.5W (Ta) | ||||
|
|
|
VIEW | Infineon Technologies | MOSFET N-CH 30V 8.3A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | FETKY™ | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-SO | 0 | 665 | N-Channel | Schottky Diode (Isolated) | 30V | 8.3A (Ta) | 25 mOhm @ 7A, 4.5V | 1V @ 250µA | 17nC @ 5V | - | 4.5V | ±12V | 2.5W (Ta) | ||||
|
|
|
VIEW | Infineon Technologies | MOSFET N/P-CH 30V 3.5A/2.3A 8SO | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tube | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-SO | 0 | 665 | N and P-Channel | 2W | Logic Level Gate | 30V | 3.5A, 2.3A | 100 mOhm @ 2.2A, 10V | 3V @ 250µA | 14nC @ 10V | 190pF @ 15V |
