- Mounting Style :
- Package / Case :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
2,326
In-stock
|
Infineon Technologies | MOSFET TRENCH_MOSFETS | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 95 A | 3.6 mOhms | 2.2 V | 68 nC | Enhancement | StrongIRFET | |||
|
|
1,182
In-stock
|
Infineon Technologies | MOSFET TRENCH_MOSFETS | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 90 A | 4.2 mOhms | 2.2 V | 68 nC | Enhancement | StrongIRFET | |||
|
|
1,375
In-stock
|
Infineon Technologies | MOSFET N-CHANNEL_30/40V | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 40 A | 7 mOhms | 2.2 V | 13.7 nC | Enhancement | ||||
|
|
600
In-stock
|
Infineon Technologies | MOSFET MOSFET, 40V, 118A, 3 62 nC Qg, TO-220AB | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 123 A | 2.6 mOhms | 2.2 V | 93 nC | Enhancement | StrongIRFET |
