- Mounting Style :
- Package / Case :
- Rds On - Drain-Source Resistance :
5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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1,816
In-stock
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Infineon Technologies | MOSFET MOSFET, 100V, 64A, 1 50 nC Qg, TO-262 | 20 V | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 61 A | 13.9 mOhms | 4 V | 58 nC | Enhancement | ||||
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224
In-stock
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Infineon Technologies | MOSFET N-Ch 250V 61A TO220-3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 250 V | 61 A | 19 mOhms | 2 V | 86 nC | Enhancement | ||||
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417
In-stock
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Infineon Technologies | MOSFET N-Ch 250V 61A TO220-3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 250 V | 61 A | 19 mOhms | 2 V | 86 nC | Enhancement | OptiMOS | |||
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74,200
In-stock
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Infineon Technologies | MOSFET MOSFT 55V 61A 14mOhm 61nC Log Lvl | SMD/SMT | TO-252-3 | + 175 C | Reel | 1 Channel | Si | N-Channel | 55 V | 61 A | 14 mOhms | 3 V | 92 nC | |||||||
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VIEW | Infineon Technologies | MOSFET 55V, 61A, 14 mOhm Auto Lgc Lvl MOSFET | SMD/SMT | TO-252-3 | + 175 C | Reel | 1 Channel | Si | N-Channel | 55 V | 61 A | 12 mOhms | 61 nC |
