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Package / Case :
Packaging :
Vds - Drain-Source Breakdown Voltage :
Qg - Gate Charge :
5 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Channel Mode Tradename
IPP072N10N3 G
1+
$1.590
10+
$1.360
100+
$1.090
500+
$0.946
RFQ
746
In-stock
Infineon Technologies MOSFET N-Ch 100V 80A TO220-3 OptiMOS 3 20 V Through Hole TO-220-3 - 55 C + 175 C Tube 1 Channel Si N-Channel 100 V 80 A 6.2 mOhms 2 V 68 nC Enhancement OptiMOS
IPP062NE7N3 G
1+
$1.780
10+
$1.510
100+
$1.210
500+
$1.060
RFQ
591
In-stock
Infineon Technologies MOSFET N-Ch 75V 80A TO220-3 OptiMOS 3 20 V Through Hole TO-220-3 - 55 C + 175 C Tube 1 Channel Si N-Channel 75 V 80 A 6.2 mOhms   42 nC   OptiMOS
IPP072N10N3GXKSA1
1+
$1.590
10+
$1.360
100+
$1.090
500+
$0.946
RFQ
446
In-stock
Infineon Technologies MOSFET N-Ch 100V 80A TO220-3 OptiMOS 3 20 V Through Hole TO-220-3 - 55 C + 175 C Tube 1 Channel Si N-Channel 100 V 80 A 6.2 mOhms 2 V 68 nC Enhancement OptiMOS
IPP072N10N3GXK
1+
$1.480
10+
$1.260
100+
$0.968
500+
$0.856
RFQ
500
In-stock
Infineon Technologies MOSFET N-Ch 100V 80A TO220-3 OptiMOS 3 20 V Through Hole TO-220-3 - 55 C + 175 C Tube 1 Channel Si N-Channel 100 V 80 A 6.2 mOhms 2 V 68 nC Enhancement  
IPB70N04S3-07
1+
$0.940
10+
$0.757
100+
$0.582
500+
$0.514
1000+
$0.406
RFQ
327
In-stock
Infineon Technologies MOSFET N-Ch 40V 80A D2PAK-2 OptiMOS-T 20 V SMD/SMT TO-263-3 - 55 C + 175 C Reel 1 Channel Si N-Channel 40 V 80 A 6.2 mOhms     Enhancement OptiMOS
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