- Mounting Style :
- Package / Case :
- Qg - Gate Charge :
5 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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602
In-stock
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Infineon Technologies | MOSFET N-Ch 75V 100A TO220-3 OptiMOS | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 75 V | 100 A | 5 mOhms | 1.2 V | 246 nC | Enhancement | OptiMOS | ||||
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290
In-stock
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Infineon Technologies | MOSFET MOSFT 75V 130A 6.3mOhm 120nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 75 V | 120 A | 5 mOhms | 4 V | 120 nC | ||||||
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12,620
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 50A IPAK-3 OptiMOS 3 | 20 V | Through Hole | TO-251-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 30 V | 50 A | 5 mOhms | 1 V | 30 nC | Enhancement | OptiMOS | |||
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VIEW | Infineon Technologies | MOSFET N-Ch 75V 100A TO220-3 OptiMOS | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 75 V | 100 A | 5 mOhms | 1.2 V | 246 nC | Enhancement | |||||
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752
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 50A IPAK-3 OptiMOS 3 | 20 V | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 30 V | 50 A | 5 mOhms | Enhancement | OptiMOS |