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Packaging :
Vds - Drain-Source Breakdown Voltage :
Id - Continuous Drain Current :
Vgs th - Gate-Source Threshold Voltage :
Qg - Gate Charge :
5 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Channel Mode Tradename
IPP100N08S2L-07
1+
$2.130
10+
$1.810
100+
$1.450
500+
$1.270
RFQ
602
In-stock
Infineon Technologies MOSFET N-Ch 75V 100A TO220-3 OptiMOS 20 V Through Hole TO-220-3 - 55 C + 175 C Tube 1 Channel Si N-Channel 75 V 100 A 5 mOhms 1.2 V 246 nC Enhancement OptiMOS
IRFS3307TRLPBF
1+
$2.970
10+
$2.520
100+
$2.190
250+
$2.080
800+
$1.560
RFQ
290
In-stock
Infineon Technologies MOSFET MOSFT 75V 130A 6.3mOhm 120nC 20 V SMD/SMT TO-252-3 - 55 C + 175 C Reel 1 Channel Si N-Channel 75 V 120 A 5 mOhms 4 V 120 nC    
IPS060N03LG AKMA1
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RFQ
12,620
In-stock
Infineon Technologies MOSFET N-Ch 30V 50A IPAK-3 OptiMOS 3 20 V Through Hole TO-251-3 - 55 C + 175 C Tube 1 Channel Si N-Channel 30 V 50 A 5 mOhms 1 V 30 nC Enhancement OptiMOS
IPP100N08S2L07AKSA1
1+
$2.130
10+
$1.810
100+
$1.450
500+
$1.270
VIEW
RFQ
Infineon Technologies MOSFET N-Ch 75V 100A TO220-3 OptiMOS 20 V Through Hole TO-220-3 - 55 C + 175 C Tube 1 Channel Si N-Channel 75 V 100 A 5 mOhms 1.2 V 246 nC Enhancement  
IPS050N03L G
1+
$0.780
10+
$0.608
100+
$0.392
1000+
$0.314
RFQ
752
In-stock
Infineon Technologies MOSFET N-Ch 30V 50A IPAK-3 OptiMOS 3 20 V Through Hole TO-262-3 - 55 C + 175 C Tube 1 Channel Si N-Channel 30 V 50 A 5 mOhms     Enhancement OptiMOS
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