- Package / Case :
- Maximum Operating Temperature :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Tradename :
17 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
2,483
In-stock
|
IXYS | MOSFET -48.0 Amps -200V 0.085 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 200 V | - 48 A | 85 mOhms | - 4 V | 103 nC | Enhancement | PolarP | |||
|
|
6,610
In-stock
|
IXYS | MOSFET -26.0 Amps -200V 0.170 Rds | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 200 V | - 26 A | 170 mOhms | Enhancement | ||||||
|
|
122
In-stock
|
IXYS | MOSFET TrenchP Power MOSFETs | 15 V | Through Hole | PLUS-247-3 | - 55 C | + 150 C | Tube | Si | P-Channel | - 200 V | - 120 A | 30 mOhms | - 4.5 V | 740 nC | Enhancement | TrenchP | ||||
|
|
1,868
In-stock
|
IXYS | MOSFET -26.0 Amps -200V 0.170 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 200 V | - 26 A | 170 mOhms | Enhancement | ||||||
|
|
248
In-stock
|
IXYS | MOSFET TrenchP Power MOSFET | 15 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | Si | P-Channel | - 200 V | - 120 A | 30 mOhms | - 4.5 V | 740 nC | Enhancement | TrenchP | ||||
|
|
499
In-stock
|
IXYS | MOSFET -90.0 Amps -200V 0.044 Rds | 20 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 200 V | - 90 A | 44 mOhms | |||||||
|
|
480
In-stock
|
IXYS | MOSFET -26.0 Amps -200V 0.170 Rds | 20 V | Through Hole | TO-3P-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 200 V | - 26 A | 170 mOhms | Enhancement | ||||||
|
|
56
In-stock
|
IXYS | MOSFET TrenchP Power MOSFET | Through Hole | TO-268-3 | Tube | 1 Channel | Si | P-Channel | - 200 V | - 68 A | 55 mOhms | ||||||||||
|
|
86
In-stock
|
IXYS | MOSFET -24 Amps -200V 0.15 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 200 V | - 24 A | 150 mOhms | - 5 V | 150 nC | Enhancement | ||||
|
|
59
In-stock
|
IXYS | MOSFET -90.0 Amps -200V 0.044 Rds | 20 V | Through Hole | PLUS-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 200 V | - 90 A | 44 mOhms | - 4 V | 205 nC | Enhancement | PolarP | |||
|
|
VIEW | IXYS | MOSFET TrenchP Power MOSFET | Through Hole | TO-247-3 | Tube | Si | P-Channel | - 200 V | - 68 A | 55 mOhms | |||||||||||
|
|
30
In-stock
|
IXYS | MOSFET TrenchP Power MOSFET | Through Hole | TO-247-3 | Tube | Si | P-Channel | - 200 V | - 90 A | 32 mOhms | |||||||||||
|
|
9
In-stock
|
IXYS | MOSFET -90.0 Amps -200V 0.048 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | Si | P-Channel | - 200 V | - 53 A | 48 mOhms | - 4 V | 205 nC | Enhancement | PolarP | ||||
|
|
2,240
In-stock
|
IXYS | MOSFET TenchP Power MOSFET | Through Hole | TO-220-3 | Tube | 1 Channel | Si | P-Channel | - 200 V | - 32 A | 130 mOhms | ||||||||||
|
|
VIEW | IXYS | MOSFET -30.0 Amps -200V 0.093 Rds | Through Hole | TO-247-3 | Tube | Si | P-Channel | - 200 V | - 30 A | 93 mOhms | |||||||||||
|
|
VIEW | IXYS | MOSFET TrenchP Power MOSFET | Through Hole | TO-247-3 | Tube | Si | P-Channel | - 200 V | - 32 A | 130 mOhms | |||||||||||
|
|
4
In-stock
|
IXYS | MOSFET -16 Amps -200V 0.22 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 200 V | - 16 A | 160 mOhms | - 5 V | 95 nC | Enhancement |
