- Mounting Style :
- Package / Case :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
- Tradename :
22 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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484
In-stock
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IXYS | MOSFET 500V 30A | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 30 A | 200 mOhms | Enhancement | HyperFET | |||||
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35
In-stock
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IXYS | MOSFET Q3Class HiPerFET Pwr MOSFET 500V/30A | 30 V | Through Hole | TO-247-3 | Tube | 1 Channel | Si | N-Channel | 500 V | 30 A | 200 mOhms | 62 nC | HyperFET | |||||||
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53
In-stock
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IXYS | MOSFET 30.0 Amps 500V 0.002 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 30 A | 200 mOhms | 4.5 V | 240 nC | Enhancement | Linear L2 | |||
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110
In-stock
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IXYS | MOSFET 500V 30A | 30 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 30 A | 200 mOhms | Enhancement | HyperFET | |||||
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48
In-stock
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IXYS | MOSFET Q3Class HiPerFET Pwr MOSFET 500V/30A | 30 V | SMD/SMT | TO-268-3 | Tube | 1 Channel | Si | N-Channel | 500 V | 30 A | 200 mOhms | 62 nC | HyperFET | |||||||
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30
In-stock
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IXYS | MOSFET 30.0 Amps 500 V 0.2 Ohm Rds | 30 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 30 A | 200 mOhms | Enhancement | ||||||
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10
In-stock
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IXYS | MOSFET 30.0 Amps 500 V 0.2 Ohm Rds | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 30 A | 165 mOhms | 5 V | 70 nC | Enhancement | PolarHV | |||
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20
In-stock
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IXYS | MOSFET LINEAR L2 SERIES MOSFET 500V 30A | 20 V | Through Hole | TO-3P-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 30 A | 200 mOhms | 4.5 V | 240 nC | Enhancement | Linear L2 | |||
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VIEW | IXYS | MOSFET LINEAR L2 SERIES MOSFET 500V 30A | Through Hole | TO-268-3 | Tube | 1 Channel | Si | N-Channel | 500 V | 30 A | 215 mOhms | ||||||||||
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VIEW | IXYS | MOSFET 30 Amps 500V | Through Hole | TO-3P-3 | Tube | 1 Channel | Si | N-Channel | 500 V | 30 A | 200 mOhms | ||||||||||
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VIEW | IXYS | MOSFET 30 Amps 500V | Through Hole | TO-268-3 | Tube | 1 Channel | Si | N-Channel | 500 V | 30 A | 200 mOhms | ||||||||||
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VIEW | IXYS | MOSFET 30.0 Amps 500 V 0.2 Ohm Rds | 30 V | Through Hole | TO-3P-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 30 A | 165 mOhms | 5 V | 70 nC | Enhancement | PolarHV | |||
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VIEW | IXYS | MOSFET 30 Amps 500V 0.16 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 30 A | 160 mOhms | Enhancement | HyperFET | |||||
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VIEW | IXYS | MOSFET 30 Amps 500V 0.17 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 30 A | 170 mOhms | Enhancement | ||||||
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VIEW | IXYS | MOSFET 30 Amps 500V 0.16 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 30 A | 160 mOhms | Enhancement | ||||||
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VIEW | IXYS | MOSFET 30 Amps 500V 0.15 Rds | 20 V | SMD/SMT | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 30 A | 160 mOhms | Enhancement | HyperFET | |||||
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VIEW | IXYS | MOSFET 30 Amps 500V 0.16 Rds | 20 V | SMD/SMT | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 30 A | 160 mOhms | Enhancement | ||||||
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VIEW | IXYS | MOSFET 30 Amps 500V 0.16 Rds | 20 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 30 A | 160 mOhms | Enhancement | HyperFET | |||||
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VIEW | IXYS | MOSFET 30 Amps 500V 0.16 Rds | 20 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 30 A | 160 mOhms | Enhancement | ||||||
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VIEW | IXYS | MOSFET 30 Amps 500V | Through Hole | TO-247-3 | Tube | 1 Channel | Si | N-Channel | 500 V | 30 A | 200 mOhms | ||||||||||
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VIEW | IXYS | MOSFET 30 Amps 500V 0.16 Rds | 20 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 30 A | 160 mOhms | Enhancement | ||||||
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VIEW | IXYS | MOSFET 30 Amps 500V 0.16 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 30 A | 160 mOhms | Enhancement |
